{"title":"通过掺杂ti3c2tx的发射层，提高了准二维钙钛矿发光二极管的效率","authors":"Zhenyang Wang, Hui Zhang, Zhixing Chen, Xingyue Zhang, Yuanming Zhou, Fei Mei","doi":"10.1007/s10854-025-14843-7","DOIUrl":null,"url":null,"abstract":"<div><p>The recent attention accorded to perovskite light-emitting diodes (PeLEDs) can be attributed to their exceptional optoelectronic characteristics. In this paper, the perovskite emissive layer (EML) modified by two-dimensional material Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene was explored with the aim of improving the morphology of perovskite films and the luminescence efficiency of PeLEDs. A doping concentration of 0.2 mM Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> yielded optimal results for the PeLEDs, with a maximum luminance of 8317 cd/m<sup>2</sup> and a maximum current efficiency (CE) of 6.63 cd/A, representing a 200 and 103% enhancement, respectively, in comparison to the reference device lacking Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub>. It has been evidenced that doping Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene plays the role of enhancing the morphology of perovskite films and passivating the defects present in these films. Furthermore, Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> facilitates the exciton recombination efficiency, enhances the radiative recombination of the emissive layer and thus improves the optoelectronic efficiency of the PeLEDs. This work presents novel concepts for the utilization of MXene in PeLEDs.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 13","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced efficiency of quasi-two-dimensional perovskite light-emitting diodes through the incorporation of a Ti3C2Tx-doped emissive layer\",\"authors\":\"Zhenyang Wang, Hui Zhang, Zhixing Chen, Xingyue Zhang, Yuanming Zhou, Fei Mei\",\"doi\":\"10.1007/s10854-025-14843-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The recent attention accorded to perovskite light-emitting diodes (PeLEDs) can be attributed to their exceptional optoelectronic characteristics. In this paper, the perovskite emissive layer (EML) modified by two-dimensional material Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene was explored with the aim of improving the morphology of perovskite films and the luminescence efficiency of PeLEDs. A doping concentration of 0.2 mM Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> yielded optimal results for the PeLEDs, with a maximum luminance of 8317 cd/m<sup>2</sup> and a maximum current efficiency (CE) of 6.63 cd/A, representing a 200 and 103% enhancement, respectively, in comparison to the reference device lacking Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub>. It has been evidenced that doping Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene plays the role of enhancing the morphology of perovskite films and passivating the defects present in these films. Furthermore, Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> facilitates the exciton recombination efficiency, enhances the radiative recombination of the emissive layer and thus improves the optoelectronic efficiency of the PeLEDs. This work presents novel concepts for the utilization of MXene in PeLEDs.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 13\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-05-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-14843-7\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14843-7","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Enhanced efficiency of quasi-two-dimensional perovskite light-emitting diodes through the incorporation of a Ti3C2Tx-doped emissive layer
The recent attention accorded to perovskite light-emitting diodes (PeLEDs) can be attributed to their exceptional optoelectronic characteristics. In this paper, the perovskite emissive layer (EML) modified by two-dimensional material Ti3C2Tx MXene was explored with the aim of improving the morphology of perovskite films and the luminescence efficiency of PeLEDs. A doping concentration of 0.2 mM Ti3C2Tx yielded optimal results for the PeLEDs, with a maximum luminance of 8317 cd/m2 and a maximum current efficiency (CE) of 6.63 cd/A, representing a 200 and 103% enhancement, respectively, in comparison to the reference device lacking Ti3C2Tx. It has been evidenced that doping Ti3C2Tx MXene plays the role of enhancing the morphology of perovskite films and passivating the defects present in these films. Furthermore, Ti3C2Tx facilitates the exciton recombination efficiency, enhances the radiative recombination of the emissive layer and thus improves the optoelectronic efficiency of the PeLEDs. This work presents novel concepts for the utilization of MXene in PeLEDs.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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