Huilong Li , Jiahui Yang , Jiabin Lu , Jiajian Sun , Da Hu , Qiusheng Yan
{"title":"单晶AlN紫外光催化化学机械抛光工艺参数研究","authors":"Huilong Li , Jiahui Yang , Jiabin Lu , Jiajian Sun , Da Hu , Qiusheng Yan","doi":"10.1016/j.diamond.2025.112407","DOIUrl":null,"url":null,"abstract":"<div><div>Single-crystal aluminum nitride (AlN) has a wide band gap and high thermal conductivity, and is a promising 3th generation semiconductor material. However, single-crystal AlN is characterised by its hardness, good wear resistance and chemical inertness, which collectively present significant challenges in achieving both high efficiency and high-quality polishing. In this paper, the focus is on the processing of single-crystal AlN using chemical mechanical polishing based on UV photocatalysis. The study explores the influence of reaction parameters, including H<sub>2</sub>O<sub>2</sub> concentration, TiO<sub>2</sub> concentration, and light intensity, on the concentration of <img>OH. Furthermore, the influence of chemical reaction parameters (H<sub>2</sub>O<sub>2</sub> concentration, TiO<sub>2</sub> concentration, light intensity, lighting methods) and mechanical process parameters (abrasive grain size, abrasive concentration, polishing pressure, polishing pad speed) on the processing of single-crystal AlN and the polishing mechanism were studied through single-factor polishing experiments. The findings indicate a robust correlation between the material removal rate (MRR) of single-crystal AlN and the concentration of <img>OH, with both exhibiting an initial increase followed by a subsequent decrease in response to increasing H<sub>2</sub>O<sub>2</sub> concentration, TiO<sub>2</sub> concentration, and light intensity. The material removal rate of single-crystal AlN is increased by increasing the abrasive grain size, abrasive concentration, polishing pressure and polishing pad speed. As the H<sub>2</sub>O<sub>2</sub> concentration, TiO<sub>2</sub> concentration, light intensity, abrasive grain size, abrasive concentration, polishing pressure and polishing pad speed increased, the surface roughness of single-crystal AlN first decreased and then increased. In the UV photocatalytic reaction, AlN reacts with <img>OH or H<sub>2</sub>O to form a corrosion layer (Al<sub>2</sub>O<sub>3</sub>, AlOOH and Al(OH)<sub>3</sub>), which is then removed by the mechanical action of the abrasive, exposing a new single-crystal AlN surface on which corrosion and mechanical removal continue to occur. This paper provides more evidence for the application of UV photocatalytic technology in the field of single-crystal AlN polishing.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"156 ","pages":"Article 112407"},"PeriodicalIF":4.3000,"publicationDate":"2025-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study on the process parameters of UV photocatalytic chemical mechanical polishing for single-crystal AlN\",\"authors\":\"Huilong Li , Jiahui Yang , Jiabin Lu , Jiajian Sun , Da Hu , Qiusheng Yan\",\"doi\":\"10.1016/j.diamond.2025.112407\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Single-crystal aluminum nitride (AlN) has a wide band gap and high thermal conductivity, and is a promising 3th generation semiconductor material. However, single-crystal AlN is characterised by its hardness, good wear resistance and chemical inertness, which collectively present significant challenges in achieving both high efficiency and high-quality polishing. In this paper, the focus is on the processing of single-crystal AlN using chemical mechanical polishing based on UV photocatalysis. The study explores the influence of reaction parameters, including H<sub>2</sub>O<sub>2</sub> concentration, TiO<sub>2</sub> concentration, and light intensity, on the concentration of <img>OH. Furthermore, the influence of chemical reaction parameters (H<sub>2</sub>O<sub>2</sub> concentration, TiO<sub>2</sub> concentration, light intensity, lighting methods) and mechanical process parameters (abrasive grain size, abrasive concentration, polishing pressure, polishing pad speed) on the processing of single-crystal AlN and the polishing mechanism were studied through single-factor polishing experiments. The findings indicate a robust correlation between the material removal rate (MRR) of single-crystal AlN and the concentration of <img>OH, with both exhibiting an initial increase followed by a subsequent decrease in response to increasing H<sub>2</sub>O<sub>2</sub> concentration, TiO<sub>2</sub> concentration, and light intensity. The material removal rate of single-crystal AlN is increased by increasing the abrasive grain size, abrasive concentration, polishing pressure and polishing pad speed. As the H<sub>2</sub>O<sub>2</sub> concentration, TiO<sub>2</sub> concentration, light intensity, abrasive grain size, abrasive concentration, polishing pressure and polishing pad speed increased, the surface roughness of single-crystal AlN first decreased and then increased. In the UV photocatalytic reaction, AlN reacts with <img>OH or H<sub>2</sub>O to form a corrosion layer (Al<sub>2</sub>O<sub>3</sub>, AlOOH and Al(OH)<sub>3</sub>), which is then removed by the mechanical action of the abrasive, exposing a new single-crystal AlN surface on which corrosion and mechanical removal continue to occur. This paper provides more evidence for the application of UV photocatalytic technology in the field of single-crystal AlN polishing.</div></div>\",\"PeriodicalId\":11266,\"journal\":{\"name\":\"Diamond and Related Materials\",\"volume\":\"156 \",\"pages\":\"Article 112407\"},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2025-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Diamond and Related Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0925963525004649\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, COATINGS & FILMS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Diamond and Related Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925963525004649","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}
Study on the process parameters of UV photocatalytic chemical mechanical polishing for single-crystal AlN
Single-crystal aluminum nitride (AlN) has a wide band gap and high thermal conductivity, and is a promising 3th generation semiconductor material. However, single-crystal AlN is characterised by its hardness, good wear resistance and chemical inertness, which collectively present significant challenges in achieving both high efficiency and high-quality polishing. In this paper, the focus is on the processing of single-crystal AlN using chemical mechanical polishing based on UV photocatalysis. The study explores the influence of reaction parameters, including H2O2 concentration, TiO2 concentration, and light intensity, on the concentration of OH. Furthermore, the influence of chemical reaction parameters (H2O2 concentration, TiO2 concentration, light intensity, lighting methods) and mechanical process parameters (abrasive grain size, abrasive concentration, polishing pressure, polishing pad speed) on the processing of single-crystal AlN and the polishing mechanism were studied through single-factor polishing experiments. The findings indicate a robust correlation between the material removal rate (MRR) of single-crystal AlN and the concentration of OH, with both exhibiting an initial increase followed by a subsequent decrease in response to increasing H2O2 concentration, TiO2 concentration, and light intensity. The material removal rate of single-crystal AlN is increased by increasing the abrasive grain size, abrasive concentration, polishing pressure and polishing pad speed. As the H2O2 concentration, TiO2 concentration, light intensity, abrasive grain size, abrasive concentration, polishing pressure and polishing pad speed increased, the surface roughness of single-crystal AlN first decreased and then increased. In the UV photocatalytic reaction, AlN reacts with OH or H2O to form a corrosion layer (Al2O3, AlOOH and Al(OH)3), which is then removed by the mechanical action of the abrasive, exposing a new single-crystal AlN surface on which corrosion and mechanical removal continue to occur. This paper provides more evidence for the application of UV photocatalytic technology in the field of single-crystal AlN polishing.
期刊介绍:
DRM is a leading international journal that publishes new fundamental and applied research on all forms of diamond, the integration of diamond with other advanced materials and development of technologies exploiting diamond. The synthesis, characterization and processing of single crystal diamond, polycrystalline films, nanodiamond powders and heterostructures with other advanced materials are encouraged topics for technical and review articles. In addition to diamond, the journal publishes manuscripts on the synthesis, characterization and application of other related materials including diamond-like carbons, carbon nanotubes, graphene, and boron and carbon nitrides. Articles are sought on the chemical functionalization of diamond and related materials as well as their use in electrochemistry, energy storage and conversion, chemical and biological sensing, imaging, thermal management, photonic and quantum applications, electron emission and electronic devices.
The International Conference on Diamond and Carbon Materials has evolved into the largest and most well attended forum in the field of diamond, providing a forum to showcase the latest results in the science and technology of diamond and other carbon materials such as carbon nanotubes, graphene, and diamond-like carbon. Run annually in association with Diamond and Related Materials the conference provides junior and established researchers the opportunity to exchange the latest results ranging from fundamental physical and chemical concepts to applied research focusing on the next generation carbon-based devices.