利用la掺杂ZnO薄膜研究氧空位在刚果红光降解中的作用

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-05-06 DOI:10.1016/j.mseb.2025.118388

C. Mrabet, R. Jaballah, E. Hassini

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引用次数: 0

摘要

采用喷雾热解技术制备ZnO:La [0,1,2,3,4 at]薄膜。%]在450°C的玻璃基板上。x射线衍射图显示为六方结构，晶粒尺寸在80 ~ 92 nm之间。利用SEM图像分析了La掺杂对晶粒尺寸的影响。紫外可见测量结果表明，掺杂对光学带隙和乌尔巴赫能均有显著影响。利用PL光谱对结构缺陷进行表征，并定量其浓度。当暴露在阳光下时，含有最高氧空位浓度的ZnO:La3%样品对刚果红的光催化降解效果更好，其动力学速率常数比纯ZnO高3倍。光催化活性与氧空位浓度之间的相关性突出了这些缺陷在提高la掺杂ZnO薄膜光催化性能方面的重要作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Assessment of the role of oxygen vacancies in Congo red photodegradation under sunlight irradiation by using La-doped ZnO thin films

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Assessment of the role of oxygen vacancies in Congo red photodegradation under sunlight irradiation by using La-doped ZnO thin films

The spray pyrolysis technique was used to deposit thin films of ZnO:La [0,1,2,3,4 at.%] on glass substrates at 450 °C. X-ray diffraction patterns revealed a hexagonal structure with crystallites ranging in size from 80 to 92 nm. The impact of La doping on grain size was examined using SEM images. UV–Vis measurements revealed that doping had a significant effect on both the optical band gap and Urbach energy. PL spectroscopy was used to characterize structural defects and quantify their concentration. When exposed to sunlight, the ZnO:La3% sample, which contained the highest concentration of oxygen vacancies, showed improved photocatalytic degradation of Congo red with a kinetic rate constant three times higher than that of pure ZnO. The correlation between photocatalytic activity and oxygen vacancy concentration highlighted the crucial role of these defects in enhancing the photocatalytic performance of La-doped ZnO thin films.

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.