基于动态规划的InGaN/GaN多量子阱太阳能电池模型参数提取

IF 1.6 4区计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Chinese Journal of Electronics Pub Date : 2025-03-01 DOI:10.23919/cje.2023.00.377

Hengsheng Shan;Chengke Li;Xiaoya Li;Minghui Li;Yifan Song;Shufang Ma;Bingshe Xu

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引用次数: 0

摘要

提出了一种用于单二极管模型（SDM）参数提取的动态规划算法。从铟含量分别为7%和18%、AM1.5标准光照条件下InGaN/GaN多量子阱太阳能电池的电流-电压曲线中提取SDM的5个参数。该器件串联电阻的范围是自适应选择的，其值是随机确定的。在规划好串联电阻和理想因子范围后，利用电流-电压曲线的均方根误差（RMSE）和光电转换效率迭代求解SDM参数。基于这种参数提取方法，与其他传统算法相比，该算法速度更快，精度更高。得到的RMSE值控制在1.2E-5以内，计算得到的填充系数和光电转换效率与实测值基本一致。该研究为先进半导体光伏电池系统的功率优化提供了参考。

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Model Parameter Extraction for InGaN/GaN Multiple Quantum Well-Based Solar Cells Using Dynamic Programming

A dynamic programming algorithm is proposed for parameter extraction of the single-diode model (SDM). Five parameters of SDM are extracted from current-voltage curves of InGaN/GaN multi-quantum wells solar cells under AM1.5 standard sunlight conditions, with indium compositions of 7% and 18%. The range of series resistance of the device is adaptively selected and its value is randomly determined. After the series resistance and the range of ideal factors are planned, the parameters of SDM are iteratively solved using the root mean square error (RMSE) of the current-voltage curve and the photoelectric conversion efficiency. Based on this parameter extraction approach, the proposed algorithm is faster and more accurate compared to other conventional algorithms. Additionally, the obtained RMSE value is controlled within 1.2E-5, and the calculated fill factor and photoelectric conversion efficiency are consistent with the measured values. This study provides a reference for power optimization of advanced semiconductor photovoltaic cell systems.

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来源期刊

Chinese Journal of Electronics 工程技术-工程：电子与电气

CiteScore

3.70

自引率

16.70%

发文量

342

审稿时长

12.0 months

期刊介绍： CJE focuses on the emerging fields of electronics, publishing innovative and transformative research papers. Most of the papers published in CJE are from universities and research institutes, presenting their innovative research results. Both theoretical and practical contributions are encouraged, and original research papers reporting novel solutions to the hot topics in electronics are strongly recommended.