Ya Zhao;Lingao Huang;Runchen Wang;Jun Yin;Pui-In Mak;Li Geng;Chao Fan
{"title":"一种0.0019 mm²lc环振荡器,带超紧凑变压器,实现175.2 dBc/Hz FoM@1MHz和202.4 dBc/Hz FoMA","authors":"Ya Zhao;Lingao Huang;Runchen Wang;Jun Yin;Pui-In Mak;Li Geng;Chao Fan","doi":"10.1109/TCSII.2025.3553716","DOIUrl":null,"url":null,"abstract":"This brief describes an area-efficient LC-ring oscillator featuring an ultra-compact transformer resonator. The series inverters could be equivalent to the negative resistors providing gain compensation. The involved inverters and switched-capacitor banks are fully integrated underneath the transformer resonator. Thus, with a comparable area of the typical ring oscillators, our oscillator shows significantly improved phase noise (PN) and figure-of-merit (FoM). Besides, we implemented the stacked-coupling and distributed-coupling transformer-based LC-ring oscillators for the PN and FoM comparison. The stacked-coupling LC-ring oscillator can lower the PN with the same frequency and power budget. Fabricated in 40-nm CMOS, our stacked-coupling LC-ring oscillator scores a <inline-formula> <tex-math>${\\mathrm { PN}}_{\\unicode {0x0040}1{\\mathrm { MHz}}}$ </tex-math></inline-formula> of -110.4 dBc/Hz across the frequency tuning range from 3.7 to 5.1 GHz with an active area of 0.0019 mm2, corresponding to a superior FoM (FoMA)<inline-formula> <tex-math>${}_{\\text {@1MHz}}$ </tex-math></inline-formula> of 175.2 dBc/Hz (202.4 dBc/Hz) that is 4.2 dB (6 dB) higher than the distributed-coupling LC-ring oscillator.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 5","pages":"693-697"},"PeriodicalIF":4.0000,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 0.0019-mm² LC-Ring Oscillator With an Ultra-Compact Transformer Achieving 175.2 dBc/Hz FoM@1MHz and 202.4 dBc/Hz FoMA\",\"authors\":\"Ya Zhao;Lingao Huang;Runchen Wang;Jun Yin;Pui-In Mak;Li Geng;Chao Fan\",\"doi\":\"10.1109/TCSII.2025.3553716\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This brief describes an area-efficient LC-ring oscillator featuring an ultra-compact transformer resonator. The series inverters could be equivalent to the negative resistors providing gain compensation. The involved inverters and switched-capacitor banks are fully integrated underneath the transformer resonator. Thus, with a comparable area of the typical ring oscillators, our oscillator shows significantly improved phase noise (PN) and figure-of-merit (FoM). Besides, we implemented the stacked-coupling and distributed-coupling transformer-based LC-ring oscillators for the PN and FoM comparison. The stacked-coupling LC-ring oscillator can lower the PN with the same frequency and power budget. Fabricated in 40-nm CMOS, our stacked-coupling LC-ring oscillator scores a <inline-formula> <tex-math>${\\\\mathrm { PN}}_{\\\\unicode {0x0040}1{\\\\mathrm { MHz}}}$ </tex-math></inline-formula> of -110.4 dBc/Hz across the frequency tuning range from 3.7 to 5.1 GHz with an active area of 0.0019 mm2, corresponding to a superior FoM (FoMA)<inline-formula> <tex-math>${}_{\\\\text {@1MHz}}$ </tex-math></inline-formula> of 175.2 dBc/Hz (202.4 dBc/Hz) that is 4.2 dB (6 dB) higher than the distributed-coupling LC-ring oscillator.\",\"PeriodicalId\":13101,\"journal\":{\"name\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"volume\":\"72 5\",\"pages\":\"693-697\"},\"PeriodicalIF\":4.0000,\"publicationDate\":\"2025-03-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10937079/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems II: Express Briefs","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10937079/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 0.0019-mm² LC-Ring Oscillator With an Ultra-Compact Transformer Achieving 175.2 dBc/Hz FoM@1MHz and 202.4 dBc/Hz FoMA
This brief describes an area-efficient LC-ring oscillator featuring an ultra-compact transformer resonator. The series inverters could be equivalent to the negative resistors providing gain compensation. The involved inverters and switched-capacitor banks are fully integrated underneath the transformer resonator. Thus, with a comparable area of the typical ring oscillators, our oscillator shows significantly improved phase noise (PN) and figure-of-merit (FoM). Besides, we implemented the stacked-coupling and distributed-coupling transformer-based LC-ring oscillators for the PN and FoM comparison. The stacked-coupling LC-ring oscillator can lower the PN with the same frequency and power budget. Fabricated in 40-nm CMOS, our stacked-coupling LC-ring oscillator scores a ${\mathrm { PN}}_{\unicode {0x0040}1{\mathrm { MHz}}}$ of -110.4 dBc/Hz across the frequency tuning range from 3.7 to 5.1 GHz with an active area of 0.0019 mm2, corresponding to a superior FoM (FoMA)${}_{\text {@1MHz}}$ of 175.2 dBc/Hz (202.4 dBc/Hz) that is 4.2 dB (6 dB) higher than the distributed-coupling LC-ring oscillator.
期刊介绍:
TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes:
Circuits: Analog, Digital and Mixed Signal Circuits and Systems
Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic
Circuits and Systems, Power Electronics and Systems
Software for Analog-and-Logic Circuits and Systems
Control aspects of Circuits and Systems.