Shuang Liu;Jingzhou Pang;Ruibin Gao;Zhijiang Dai;Mingyu Li;Shichang Chen;Weimin Shi
{"title":"基于谐波控制技术的5G高效宽带GaAs HBT多尔蒂功率放大器","authors":"Shuang Liu;Jingzhou Pang;Ruibin Gao;Zhijiang Dai;Mingyu Li;Shichang Chen;Weimin Shi","doi":"10.1109/TCSII.2025.3549058","DOIUrl":null,"url":null,"abstract":"This brief presents the design and fabrication of a highly-efficient Doherty power amplifier (DPA) for 5G n77 and n78 bands. The proposed architecture is based on a 2-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>m GaAs heterojunction bipolar transistor (HBT) process to realize a monolithic microwave integrated circuit (MMIC) with an area of <inline-formula> <tex-math>$1.7\\times 1.4~{{\\text {mm}}^{{2}}}$ </tex-math></inline-formula>. Additionally, An output network is designed in conjunction with the load modulation network on the Rogers 4350 PCB, which is augmented with high-order harmonic control circuit for efficiency enhancement. The proposed DPA, operating within the 3.1-4.2 GHz range, exhibits a fractional bandwidth over 30%, a saturated output power over 33.8 dBm, a saturated power-added efficiency (PAE) ranging from 39.6% to 44.9%, and a 6 dB power back-off (PBO) PAE of 42.3% to 46.1%.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 5","pages":"713-717"},"PeriodicalIF":4.0000,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Highly-Efficient Broadband GaAs HBT Doherty Power Amplifier With Harmonic Control Technique for 5G Application\",\"authors\":\"Shuang Liu;Jingzhou Pang;Ruibin Gao;Zhijiang Dai;Mingyu Li;Shichang Chen;Weimin Shi\",\"doi\":\"10.1109/TCSII.2025.3549058\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This brief presents the design and fabrication of a highly-efficient Doherty power amplifier (DPA) for 5G n77 and n78 bands. The proposed architecture is based on a 2-<inline-formula> <tex-math>$\\\\mu $ </tex-math></inline-formula>m GaAs heterojunction bipolar transistor (HBT) process to realize a monolithic microwave integrated circuit (MMIC) with an area of <inline-formula> <tex-math>$1.7\\\\times 1.4~{{\\\\text {mm}}^{{2}}}$ </tex-math></inline-formula>. Additionally, An output network is designed in conjunction with the load modulation network on the Rogers 4350 PCB, which is augmented with high-order harmonic control circuit for efficiency enhancement. The proposed DPA, operating within the 3.1-4.2 GHz range, exhibits a fractional bandwidth over 30%, a saturated output power over 33.8 dBm, a saturated power-added efficiency (PAE) ranging from 39.6% to 44.9%, and a 6 dB power back-off (PBO) PAE of 42.3% to 46.1%.\",\"PeriodicalId\":13101,\"journal\":{\"name\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"volume\":\"72 5\",\"pages\":\"713-717\"},\"PeriodicalIF\":4.0000,\"publicationDate\":\"2025-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10916757/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems II: Express Briefs","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10916757/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Highly-Efficient Broadband GaAs HBT Doherty Power Amplifier With Harmonic Control Technique for 5G Application
This brief presents the design and fabrication of a highly-efficient Doherty power amplifier (DPA) for 5G n77 and n78 bands. The proposed architecture is based on a 2-$\mu $ m GaAs heterojunction bipolar transistor (HBT) process to realize a monolithic microwave integrated circuit (MMIC) with an area of $1.7\times 1.4~{{\text {mm}}^{{2}}}$ . Additionally, An output network is designed in conjunction with the load modulation network on the Rogers 4350 PCB, which is augmented with high-order harmonic control circuit for efficiency enhancement. The proposed DPA, operating within the 3.1-4.2 GHz range, exhibits a fractional bandwidth over 30%, a saturated output power over 33.8 dBm, a saturated power-added efficiency (PAE) ranging from 39.6% to 44.9%, and a 6 dB power back-off (PBO) PAE of 42.3% to 46.1%.
期刊介绍:
TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes:
Circuits: Analog, Digital and Mixed Signal Circuits and Systems
Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic
Circuits and Systems, Power Electronics and Systems
Software for Analog-and-Logic Circuits and Systems
Control aspects of Circuits and Systems.