Sadek Boufligha, Nabil Mahamdioua, Sevgi Polat Altintas, Nevin Soylu Koc
{"title":"空穴掺杂多晶简单钙钛矿锰矿La0.6−xCaxSm0.1Ba0.3MnO3 (x = 0.0和0.1)的磁阻和电响应特性","authors":"Sadek Boufligha, Nabil Mahamdioua, Sevgi Polat Altintas, Nevin Soylu Koc","doi":"10.1007/s10854-025-14707-0","DOIUrl":null,"url":null,"abstract":"<div><p>Hole-doped manganites <span>\\({\\text{La}}_{\\left(0.6-x\\right)}{\\text{Ca}}_{x}{\\text{Sm}}_{0.1}{\\text{Ba}}_{0.3}{\\text{MnO}}_{3}\\)</span> (with <span>\\(x=0.0\\)</span> and 0.1) were synthesized using a solid-state reaction method. The structural, microstructural, electrical transport, magnetotransport, and temperature coefficient of resistance (TCR) properties were thoroughly investigated. X-ray diffraction (XRD) analysis revealed that both compounds crystallized in an orthorhombic structure with the Imma space group, with no secondary phases detected. The Ca-doped sample exhibited significantly smaller and more homogeneous grains compared to the undoped sample. Resistivity measurements showed a metal–insulator transition around <span>\\(221 K\\)</span>, with the transition temperature shifting to lower values upon Ca-doping. Magnetoresistance (MR) values at low temperatures were substantial, reaching 23.37% for the undoped sample and <span>\\(23.7\\%\\)</span> for the Ca-doped sample at <span>\\(290 K\\)</span>. The temperature dependence of resistivity exhibited both intrinsic and extrinsic contributions to magnetoresistance (MR), with a peak MR of 23.7% for the Ca-doped sample and <span>\\(23.37\\%\\)</span> for the undoped one at low temperatures. The TCR curve showed a peak of <span>\\(1.78 \\%{K}^{-1}\\)</span> at room temperature, indicating significant temperature-dependent resistance changes. Low-temperature resistivity was described with a combination of residual resistivity, weak localization, and electron–electron interactions, whereas the high-temperature behavior is well described by adiabatic small polaron hopping. These results bring out the complexity in the interrelation between structural changes and magnetotransport properties and emphasize the role of Ca-doping in tuning electrical and magnetoresistive properties in manganite perovskite.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 13","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Magnetoresistive and electrical response characteristics of hole-doped polycrystalline simple perovskite manganites La0.6−xCaxSm0.1Ba0.3MnO3 (x = 0.0 and 0.1)\",\"authors\":\"Sadek Boufligha, Nabil Mahamdioua, Sevgi Polat Altintas, Nevin Soylu Koc\",\"doi\":\"10.1007/s10854-025-14707-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Hole-doped manganites <span>\\\\({\\\\text{La}}_{\\\\left(0.6-x\\\\right)}{\\\\text{Ca}}_{x}{\\\\text{Sm}}_{0.1}{\\\\text{Ba}}_{0.3}{\\\\text{MnO}}_{3}\\\\)</span> (with <span>\\\\(x=0.0\\\\)</span> and 0.1) were synthesized using a solid-state reaction method. The structural, microstructural, electrical transport, magnetotransport, and temperature coefficient of resistance (TCR) properties were thoroughly investigated. X-ray diffraction (XRD) analysis revealed that both compounds crystallized in an orthorhombic structure with the Imma space group, with no secondary phases detected. The Ca-doped sample exhibited significantly smaller and more homogeneous grains compared to the undoped sample. Resistivity measurements showed a metal–insulator transition around <span>\\\\(221 K\\\\)</span>, with the transition temperature shifting to lower values upon Ca-doping. Magnetoresistance (MR) values at low temperatures were substantial, reaching 23.37% for the undoped sample and <span>\\\\(23.7\\\\%\\\\)</span> for the Ca-doped sample at <span>\\\\(290 K\\\\)</span>. The temperature dependence of resistivity exhibited both intrinsic and extrinsic contributions to magnetoresistance (MR), with a peak MR of 23.7% for the Ca-doped sample and <span>\\\\(23.37\\\\%\\\\)</span> for the undoped one at low temperatures. The TCR curve showed a peak of <span>\\\\(1.78 \\\\%{K}^{-1}\\\\)</span> at room temperature, indicating significant temperature-dependent resistance changes. Low-temperature resistivity was described with a combination of residual resistivity, weak localization, and electron–electron interactions, whereas the high-temperature behavior is well described by adiabatic small polaron hopping. These results bring out the complexity in the interrelation between structural changes and magnetotransport properties and emphasize the role of Ca-doping in tuning electrical and magnetoresistive properties in manganite perovskite.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 13\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-05-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-14707-0\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14707-0","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
采用固相反应法制备了掺杂孔洞的锰酸盐\({\text{La}}_{\left(0.6-x\right)}{\text{Ca}}_{x}{\text{Sm}}_{0.1}{\text{Ba}}_{0.3}{\text{MnO}}_{3}\)(分别为\(x=0.0\)和0.1)。研究了材料的结构、微观结构、电输运、磁输运和电阻温度系数(TCR)等性能。x射线衍射(XRD)分析表明,两种化合物均为具有Imma空间基团的正交晶型结构,未检测到二次相。与未掺杂的样品相比,掺钙样品的晶粒明显更小、更均匀。电阻率测量显示,在\(221 K\)附近发生金属-绝缘体转变,ca掺杂后转变温度降低。低温下的磁阻(MR)值较大,达到23.37% for the undoped sample and \(23.7\%\) for the Ca-doped sample at \(290 K\). The temperature dependence of resistivity exhibited both intrinsic and extrinsic contributions to magnetoresistance (MR), with a peak MR of 23.7% for the Ca-doped sample and \(23.37\%\) for the undoped one at low temperatures. The TCR curve showed a peak of \(1.78 \%{K}^{-1}\) at room temperature, indicating significant temperature-dependent resistance changes. Low-temperature resistivity was described with a combination of residual resistivity, weak localization, and electron–electron interactions, whereas the high-temperature behavior is well described by adiabatic small polaron hopping. These results bring out the complexity in the interrelation between structural changes and magnetotransport properties and emphasize the role of Ca-doping in tuning electrical and magnetoresistive properties in manganite perovskite.
Magnetoresistive and electrical response characteristics of hole-doped polycrystalline simple perovskite manganites La0.6−xCaxSm0.1Ba0.3MnO3 (x = 0.0 and 0.1)
Hole-doped manganites \({\text{La}}_{\left(0.6-x\right)}{\text{Ca}}_{x}{\text{Sm}}_{0.1}{\text{Ba}}_{0.3}{\text{MnO}}_{3}\) (with \(x=0.0\) and 0.1) were synthesized using a solid-state reaction method. The structural, microstructural, electrical transport, magnetotransport, and temperature coefficient of resistance (TCR) properties were thoroughly investigated. X-ray diffraction (XRD) analysis revealed that both compounds crystallized in an orthorhombic structure with the Imma space group, with no secondary phases detected. The Ca-doped sample exhibited significantly smaller and more homogeneous grains compared to the undoped sample. Resistivity measurements showed a metal–insulator transition around \(221 K\), with the transition temperature shifting to lower values upon Ca-doping. Magnetoresistance (MR) values at low temperatures were substantial, reaching 23.37% for the undoped sample and \(23.7\%\) for the Ca-doped sample at \(290 K\). The temperature dependence of resistivity exhibited both intrinsic and extrinsic contributions to magnetoresistance (MR), with a peak MR of 23.7% for the Ca-doped sample and \(23.37\%\) for the undoped one at low temperatures. The TCR curve showed a peak of \(1.78 \%{K}^{-1}\) at room temperature, indicating significant temperature-dependent resistance changes. Low-temperature resistivity was described with a combination of residual resistivity, weak localization, and electron–electron interactions, whereas the high-temperature behavior is well described by adiabatic small polaron hopping. These results bring out the complexity in the interrelation between structural changes and magnetotransport properties and emphasize the role of Ca-doping in tuning electrical and magnetoresistive properties in manganite perovskite.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.