衬底温度对光电探测器中SnSe2/TiO2异质结构的影响

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-04-28 DOI:10.1016/j.sna.2025.116641

Kuri Manjunatha , Devarajan Alagarasan , Shreyasi Das , R. Ganesan , R. Naik , Dayakrishn Purohit , M. Ramudu

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引用次数: 0

摘要

基于二维材料的异质结构的最新进展为高性能、低功耗光电探测器开辟了新的可能性。其中，层状金属二硫族化合物SnSe₂因其高电子迁移率和强光-物质相互作用而受到关注。然而，它们的使用仅限于窄波长检测。为了扩大它们在宽带检测中的应用，形成异质结是必要的。在这项工作中，通过热蒸发方法在50°C - 250°C的不同衬底温度下制备SnSe₂/TiO₂混合维异质结构，以探索其在光电应用中的潜力。结构、形态和光学表征表明，衬底温度显著影响晶体尺寸、表面形貌、透过率和带隙。基于这些异构结构的光电探测器器件在0 V偏置下表现出令人惊叹的响应性（52 mA/W）和探测性（5.42 × 10⁸Jones），具有快速的光响应特性(上升时间：174 ms；衰减时间：241毫秒)。这项研究不仅展示了SnSe₂基异质结形成的有效策略，而且强调了下一代光电探测器的混合维系统的前景。

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Influence of substrate temperature on SnSe2/TiO2 heterostructure for photodetector applications

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Influence of substrate temperature on SnSe2/TiO2 heterostructure for photodetector applications

Recent advances in 2D material-based heterostructures have opened up new possibilities for high-performance, low-power photodetectors. Among these, SnSe₂ a layered metal di-chalcogenide has gained attention due to its high electron mobility and strong light–matter interaction. However, their usage is confined to narrow wavelength detection. To extend their usage for broadband detection, formation of heterojunction is necessary. In this work, SnSe₂/TiO₂ mixed-dimensional heterostructures were fabricated via thermal evaporation method at varying substrate temperatures from 50 °C - 250 °C to explore their potential in optoelectronic applications. Structural, morphological, and optical characterizations revealed that substrate temperature significantly influence the crystallite size, surface morphology, transmittance, and bandgap. Photodetector devices based on these heterostructures exhibited impressive responsivity (52 mA/W) and detectivity (5.42 × 10⁸ Jones) under 0 V bias, with rapid photoresponse characteristics (rise time: 174 ms; decay time: 241 ms). This study not only demonstrates an effective strategy for SnSe₂-based heterojunction formation but also highlights the promise of mixed-dimensional systems for next-generation photodetectors.

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...