Scaling effect of nanoscale channel on the resistive switching performance of lateral molybdenum disulfide memristors

Lateral memristors can achieve complex neural functions by easily constructing control terminals. It is necessary to explore the scaling effect of its size on the performance of resistive switching (RS), as high-density integration is crucial for achieving high-performance neuromorphic hardware. By assembling monolayer MoS₂ flakes between nanogap gold electrodes, lateral memristors with nanoscale channel lengths were prepared, and their RS behavior was investigated. Shortening the channel length from approximately 61, 48, 42, 35, 25 and 24 nm resulted in a decrease in SET voltage from 4.82, 3.15, 2.80, 2.32 to 1.04 and 1.07 V, and a reduction in the number of pulse stimulation to turn high resistance state (HRS) to low resistance state (LRS) from 197 K, 150 K, 120 K, 75 K to 22 K and 20 K. Therefore, within the critical size range of current IC processes, the required pulse number for SET decrease approximately linearly with the reduction of channel length, and the SET voltage decreased proportional to the power of 1.55 of channel length, respectively.