氧化钒还原的现场电阻监测

IF 6.3 2区材料科学 Q2 CHEMISTRY, PHYSICAL

Journal of Alloys and Compounds Pub Date : 2025-04-30 DOI:10.1016/j.jallcom.2025.180705

Yeongjun Son , Sehwan Song , Dooyong Lee , Seonghoon Han , Jisung Lee , Seyoung Kwon , Jinho Jeon , Jong-Seong Bae , Hyun Ho Kim , Haeyong Kang , Sungkyun Park

{"title":"氧化钒还原的现场电阻监测","authors":"Yeongjun Son , Sehwan Song , Dooyong Lee , Seonghoon Han , Jisung Lee , Seyoung Kwon , Jinho Jeon , Jong-Seong Bae , Hyun Ho Kim , Haeyong Kang , Sungkyun Park","doi":"10.1016/j.jallcom.2025.180705","DOIUrl":null,"url":null,"abstract":"<div><div>The reduction process of vanadium oxide was monitored by measuring its <em>in-situ</em> electrical resistance. V<sub>2</sub>O<sub>5</sub> films deposited on <em>c</em>-Al<sub>2</sub>O<sub>3</sub> were annealed in a hydrogen environment and exhibited a sharp decrease in resistance at ∼350 °C, followed by a slight increase at ∼460 °C. Subsequent analyses confirmed that the noticeable resistance changes during the annealing process could be attributed to the reduced vanadium oxidation states. These results indicate that the variations in the resistance of the vanadium oxide films are directly related to the changes in their oxidation states. Therefore, <em>in-situ</em> electrical measurements can provide insights into the changes in the chemical state of vanadium oxide.</div></div>","PeriodicalId":344,"journal":{"name":"Journal of Alloys and Compounds","volume":"1029 ","pages":"Article 180705"},"PeriodicalIF":6.3000,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"In-situ electrical resistance monitoring of vanadium oxide reduction\",\"authors\":\"Yeongjun Son , Sehwan Song , Dooyong Lee , Seonghoon Han , Jisung Lee , Seyoung Kwon , Jinho Jeon , Jong-Seong Bae , Hyun Ho Kim , Haeyong Kang , Sungkyun Park\",\"doi\":\"10.1016/j.jallcom.2025.180705\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The reduction process of vanadium oxide was monitored by measuring its <em>in-situ</em> electrical resistance. V<sub>2</sub>O<sub>5</sub> films deposited on <em>c</em>-Al<sub>2</sub>O<sub>3</sub> were annealed in a hydrogen environment and exhibited a sharp decrease in resistance at ∼350 °C, followed by a slight increase at ∼460 °C. Subsequent analyses confirmed that the noticeable resistance changes during the annealing process could be attributed to the reduced vanadium oxidation states. These results indicate that the variations in the resistance of the vanadium oxide films are directly related to the changes in their oxidation states. Therefore, <em>in-situ</em> electrical measurements can provide insights into the changes in the chemical state of vanadium oxide.</div></div>\",\"PeriodicalId\":344,\"journal\":{\"name\":\"Journal of Alloys and Compounds\",\"volume\":\"1029 \",\"pages\":\"Article 180705\"},\"PeriodicalIF\":6.3000,\"publicationDate\":\"2025-04-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Alloys and Compounds\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0925838825022662\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Alloys and Compounds","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925838825022662","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}

引用次数: 0

摘要

通过测量氧化钒的原位电阻来监测氧化钒的还原过程。沉积在C - al2o3上的V2O5薄膜在氢气环境中退火，在~350℃时电阻急剧下降，在~460℃时电阻略有上升。随后的分析证实，在退火过程中明显的电阻变化可归因于钒氧化态的降低。这些结果表明，氧化钒薄膜电阻的变化与其氧化态的变化有直接关系。因此，原位电测量可以深入了解氧化钒化学状态的变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

In-situ electrical resistance monitoring of vanadium oxide reduction

查看原文本刊更多论文

In-situ electrical resistance monitoring of vanadium oxide reduction

The reduction process of vanadium oxide was monitored by measuring its in-situ electrical resistance. V₂O₅ films deposited on c-Al₂O₃ were annealed in a hydrogen environment and exhibited a sharp decrease in resistance at ∼350 °C, followed by a slight increase at ∼460 °C. Subsequent analyses confirmed that the noticeable resistance changes during the annealing process could be attributed to the reduced vanadium oxidation states. These results indicate that the variations in the resistance of the vanadium oxide films are directly related to the changes in their oxidation states. Therefore, in-situ electrical measurements can provide insights into the changes in the chemical state of vanadium oxide.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Journal of Alloys and Compounds 工程技术-材料科学：综合

CiteScore

11.10

自引率

14.50%

发文量

5146

审稿时长

67 days

期刊介绍： The Journal of Alloys and Compounds is intended to serve as an international medium for the publication of work on solid materials comprising compounds as well as alloys. Its great strength lies in the diversity of discipline which it encompasses, drawing together results from materials science, solid-state chemistry and physics.