C/C复合材料SiC涂层的制备及性能研究

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-04-30 DOI:10.1016/j.mseb.2025.118354

Tao Feng , Chong Li , Xingzhao Li , Bingying Wang , Enyang Liu

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引用次数: 0

摘要

C/C复合材料具有其他结构材料无法比拟的力学性能。在航空航天、核能、民用高新技术等领域具有巨大的应用潜力。本研究以硅粉为前驱体材料，采用大气等离子喷涂技术在C/C复合材料表面沉积Si涂层。通过热处理使Si涂层与C/C衬底发生固相反应，形成SiC-C/C复合层。研究了热处理温度（1300℃、1450℃、1500℃、1550℃和1600℃）对SiC-C/C复合层显微组织和抗氧化性能的影响。分析了碳化硅的形成机理。结果表明：在1500℃热处理后，SiC过渡层的密度最高；合成的碳化硅具有不规则的多边形颗粒形态，具有优异的抗氧化性能。在1500℃下暴露10 h后，氧化导致的质量损失限制在2.12%。

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Preparation and performance of SiC coating on C/C composite

C/C composite material has incomparable mechanical properties compared to other structural materials. It has great application potential in aerospace, nuclear energy, and civil high-tech fields. In this study, Si coatings were deposited on the surface of C/C composite materials using atmospheric plasma spraying with silicon powder as the precursor material. A solid-phase reaction was induced between the Si coating and the C/C substrate through heat treatment, forming a SiC-C/C composite layer. The effects of heat treatment temperature (1300 °C, 1450 °C, 1500 °C, 1550 °C, and 1600 °C) on the microstructure and oxidation resistance of the SiC-C/C composite layer were investigated. The formation mechanism of SiC was analyzed. The results show that the SiC transition layer exhibited the highest density after heat treatment at 1500 °C. The resulting SiC exhibited a morphology of irregular polygonal particles and demonstrated excellent oxidation resistance. The mass loss due to oxidation was limited to 2.12% after 10 h of exposure at 1500 °C.

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.