Liqing Xu, Tao Hong, Shibo Liu, Sining Wang, Dongrui Liu, Tianhang Zhou, Yu Xiao, Li-Dong Zhao
{"title":"具有成本效益的对称pbse热电冷却器件","authors":"Liqing Xu, Tao Hong, Shibo Liu, Sining Wang, Dongrui Liu, Tianhang Zhou, Yu Xiao, Li-Dong Zhao","doi":"10.1002/adma.202502705","DOIUrl":null,"url":null,"abstract":"Thermoelectric cooling technology has broad applications but is limited by the high cost of tellurium (Te) in commercially available Bi<sub>2</sub>Te<sub>3</sub>-based thermoelectric materials. Herein, a cost-effective symmetric PbSe-based device constructed from 7 pairs of Pb<sub>0.988</sub>Cu<sub>0.002</sub>Se (p-type) and Pb<sub>1.02</sub>Cu<sub>0.002</sub>Se (n-type) is presented, which demonstrates impressive cooling temperature difference (Δ<i>T</i><sub>C</sub>) of 32.8 and 41.0 K with the hot side maintained at 303 and 343 K, respectively. This low-cost symmetric PbSe-based device exhibits superior cost-effectiveness (Δ<i>T</i>/cost) for near-room-temperature thermoelectric cooling compared to other Bi<sub>2</sub>Te<sub>3</sub>-based devices. Its high cooling performance primarily stems from an advanced carrier and phonon transport properties in p-type Pb<sub>0.988</sub>Cu<sub>0.002</sub>Se. Specifically, Pb vacancy and Cu substitution in Pb<sub>0.988</sub>Cu<sub>0.002</sub>Se act as strong p-type dopants that effectively optimize carrier density, resulting in a maximum power factor of 28.69 µW cm<sup>−1</sup> K<sup>−2</sup> at room temperature. Moreover, the mobile Cu atoms within the lattice significantly impede phonon propagation, leading to a low room-temperature lattice thermal conductivity of 1.10 W m<sup>−1</sup> K<sup>−1</sup>. Finally, the room-temperature figure of merit (<i>ZT</i>) and average <i>ZT</i> value in p-type Pb<sub>0.988</sub>Cu<sub>0.002</sub>Se can reach 0.6 and 0.68 at 300–573 K, surpassing previous p-type PbSe-based polycrystals. This work emphasizes the significant potential of a cost-effective PbSe compound for near-room-temperature cooling applications.","PeriodicalId":114,"journal":{"name":"Advanced Materials","volume":"81 1","pages":""},"PeriodicalIF":27.4000,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Cost-Effective Symmetric PbSe-Based Device for Thermoelectric Cooling\",\"authors\":\"Liqing Xu, Tao Hong, Shibo Liu, Sining Wang, Dongrui Liu, Tianhang Zhou, Yu Xiao, Li-Dong Zhao\",\"doi\":\"10.1002/adma.202502705\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thermoelectric cooling technology has broad applications but is limited by the high cost of tellurium (Te) in commercially available Bi<sub>2</sub>Te<sub>3</sub>-based thermoelectric materials. Herein, a cost-effective symmetric PbSe-based device constructed from 7 pairs of Pb<sub>0.988</sub>Cu<sub>0.002</sub>Se (p-type) and Pb<sub>1.02</sub>Cu<sub>0.002</sub>Se (n-type) is presented, which demonstrates impressive cooling temperature difference (Δ<i>T</i><sub>C</sub>) of 32.8 and 41.0 K with the hot side maintained at 303 and 343 K, respectively. This low-cost symmetric PbSe-based device exhibits superior cost-effectiveness (Δ<i>T</i>/cost) for near-room-temperature thermoelectric cooling compared to other Bi<sub>2</sub>Te<sub>3</sub>-based devices. Its high cooling performance primarily stems from an advanced carrier and phonon transport properties in p-type Pb<sub>0.988</sub>Cu<sub>0.002</sub>Se. Specifically, Pb vacancy and Cu substitution in Pb<sub>0.988</sub>Cu<sub>0.002</sub>Se act as strong p-type dopants that effectively optimize carrier density, resulting in a maximum power factor of 28.69 µW cm<sup>−1</sup> K<sup>−2</sup> at room temperature. Moreover, the mobile Cu atoms within the lattice significantly impede phonon propagation, leading to a low room-temperature lattice thermal conductivity of 1.10 W m<sup>−1</sup> K<sup>−1</sup>. Finally, the room-temperature figure of merit (<i>ZT</i>) and average <i>ZT</i> value in p-type Pb<sub>0.988</sub>Cu<sub>0.002</sub>Se can reach 0.6 and 0.68 at 300–573 K, surpassing previous p-type PbSe-based polycrystals. 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Cost-Effective Symmetric PbSe-Based Device for Thermoelectric Cooling
Thermoelectric cooling technology has broad applications but is limited by the high cost of tellurium (Te) in commercially available Bi2Te3-based thermoelectric materials. Herein, a cost-effective symmetric PbSe-based device constructed from 7 pairs of Pb0.988Cu0.002Se (p-type) and Pb1.02Cu0.002Se (n-type) is presented, which demonstrates impressive cooling temperature difference (ΔTC) of 32.8 and 41.0 K with the hot side maintained at 303 and 343 K, respectively. This low-cost symmetric PbSe-based device exhibits superior cost-effectiveness (ΔT/cost) for near-room-temperature thermoelectric cooling compared to other Bi2Te3-based devices. Its high cooling performance primarily stems from an advanced carrier and phonon transport properties in p-type Pb0.988Cu0.002Se. Specifically, Pb vacancy and Cu substitution in Pb0.988Cu0.002Se act as strong p-type dopants that effectively optimize carrier density, resulting in a maximum power factor of 28.69 µW cm−1 K−2 at room temperature. Moreover, the mobile Cu atoms within the lattice significantly impede phonon propagation, leading to a low room-temperature lattice thermal conductivity of 1.10 W m−1 K−1. Finally, the room-temperature figure of merit (ZT) and average ZT value in p-type Pb0.988Cu0.002Se can reach 0.6 and 0.68 at 300–573 K, surpassing previous p-type PbSe-based polycrystals. This work emphasizes the significant potential of a cost-effective PbSe compound for near-room-temperature cooling applications.
期刊介绍:
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