{"title":"p-i-p+-i-n异质结构工程对InAs/GaAs量子点中电荷态和波长的调谐","authors":"Changkun Song, Jiawei Yang, Mujie Rao, Yingxin Chen, Ying Yu, Siyuan Yu","doi":"10.1063/5.0259814","DOIUrl":null,"url":null,"abstract":"We present a p-i-p+-i-n AlAs/GaAs heterostructure device that enables independent tuning of quantum dot (QD) charge states and emission wavelength, addressing a key challenge in quantum light source integration. Utilizing quantum tunneling and the quantum-confined Stark effect, this device achieves precise modulation of QD emission with asymmetric AlAs barriers facilitating hole injection while suppressing electron tunneling. Photoluminescence measurements confirm a broad wavelength tuning range (7 meV) and stabilization of the single-hole X+ state, with second-order correlation g2(0) = 0.042(2), validating single-photon purity. This platform offers robust control for spin-photon entanglement and quantum network applications, paving the way for scalable quantum technologies.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"140 1","pages":""},"PeriodicalIF":3.6000,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tuning of charge state and wavelength in InAs/GaAs quantum dots through p-i-p+-i-n heterostructure engineering\",\"authors\":\"Changkun Song, Jiawei Yang, Mujie Rao, Yingxin Chen, Ying Yu, Siyuan Yu\",\"doi\":\"10.1063/5.0259814\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a p-i-p+-i-n AlAs/GaAs heterostructure device that enables independent tuning of quantum dot (QD) charge states and emission wavelength, addressing a key challenge in quantum light source integration. Utilizing quantum tunneling and the quantum-confined Stark effect, this device achieves precise modulation of QD emission with asymmetric AlAs barriers facilitating hole injection while suppressing electron tunneling. Photoluminescence measurements confirm a broad wavelength tuning range (7 meV) and stabilization of the single-hole X+ state, with second-order correlation g2(0) = 0.042(2), validating single-photon purity. This platform offers robust control for spin-photon entanglement and quantum network applications, paving the way for scalable quantum technologies.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":\"140 1\",\"pages\":\"\"},\"PeriodicalIF\":3.6000,\"publicationDate\":\"2025-04-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0259814\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0259814","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Tuning of charge state and wavelength in InAs/GaAs quantum dots through p-i-p+-i-n heterostructure engineering
We present a p-i-p+-i-n AlAs/GaAs heterostructure device that enables independent tuning of quantum dot (QD) charge states and emission wavelength, addressing a key challenge in quantum light source integration. Utilizing quantum tunneling and the quantum-confined Stark effect, this device achieves precise modulation of QD emission with asymmetric AlAs barriers facilitating hole injection while suppressing electron tunneling. Photoluminescence measurements confirm a broad wavelength tuning range (7 meV) and stabilization of the single-hole X+ state, with second-order correlation g2(0) = 0.042(2), validating single-photon purity. This platform offers robust control for spin-photon entanglement and quantum network applications, paving the way for scalable quantum technologies.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field.
Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.