WO3纳米片自组装空心特殊核壳微球用于超级电容器高性能电极

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yu Chen, Changnan Yi, Yurong Wu, Fan Yang, Longshan Xu, Yanling Hu, Xiaoshuai Wang, Yuanyi Chen, Wenqian Qiu
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引用次数: 0

摘要

采用水热法、酸蚀法和热处理法成功地合成了具有中空和特殊核壳结构的纳米自组装WO3微球。具有氧空位(WN-O)的特殊核壳WO3样品具有更高的载流子浓度和比电容。WN-O组装的对称超级电容器在PVA/KOH凝胶电解质和3m KOH水溶液中表现出优异的性能。水相对称的WN-O超导材料表现出巨大的电容(22 mAh g−1,1 A g−1),非凡的循环稳定性(20,000次循环后保持容量的118%,5 A g−1)和巨大的能量存储容量(8.8 Wh Kg−1的能量密度,400 W Kg−1的功率密度)。此外,当电流密度增加5倍至5 A g−1时,全固态对称WN-O sc的电容保留率为52.2%,在1 A g−1时的容量为18.7 mAh g−1。WN-O电极独特的核壳结构和丰富的氧空位是其优异的电化学性能的原因。氧空位和松散的核壳结构提供了更多的活性位点,而核壳上独特的空腔结构为电荷转移提供了通道,成功地防止了充放电过程中收缩和膨胀引起的坍塌。本研究发现的机理将有助于在未来设计出性能更好的WO3储能器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Self-assembled hollow and special core–shell microspheres with WO3 nanosheets for supercapacitor high-performance electrodes

Nanosheets self-assembled WO3 microsphere with hollow and special core–shell structures was successfully synthesized using hydrothermal, acid etching, and heat treatment methods. The special core–shell WO3 samples with oxygen vacancies (WN-O) have higher carrier concentration and specific capacitance. The symmetrical supercapacitors (SCs) assembled by WN-O show excellent potential in PVA/KOH gel electrolyte and 3 M KOH aqueous solution. The aqueous symmetric WN-O SCs demonstrated great capacitance (22 mAh g−1, 1 A g−1), extraordinary stability in cycling (118% of the retained capacity after 20 000 cycles, 5 A g−1), and a huge energy storage capacity (8.8 Wh Kg−1 of energy density, 400 W Kg−1 of power density). Additionally, the all solid-state symmetric WN-O SCs displayed 52.2% retained capacitance even when the current density increases five times, to 5 A g−1, and an outstanding capacity of 18.7 mAh g−1 at 1 A g−1. The distinct core–shell structure and plenty of oxygen vacancies of the WN-O electrode are responsible for its exceptional electrochemical performance. The oxygen vacancies and loose core–shell structure provide more active sites, while the unique cavity structure on the core–shell provides channels for charge transfer and successfully prevents collapse caused by contraction and expansion during charge and discharge processes. The mechanism discovered in this study will contribute to the design of better performing WO3 energy storage devices in the future.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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