SiC功率MOSFET单事件烧毁灵敏度的质子能量依赖性

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nuclear Science Pub Date : 2025-03-12 DOI:10.1109/TNS.2025.3550609

K. Niskanen;A. Javanainen;C. Martinella;W. Hajdas;U. Grossner;H. Kettunen

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引用次数: 0

摘要

研究了碳化硅（SiC）功率mosfet单事件燃尽（SEB）灵敏度对质子能量的依赖性。实验结果表明，SEB与辐照过程中施加的质子能量和漏极偏置电压有关。利用Geant4模拟研究了主粒子与器件材料之间核反应产生的二次粒子。提出了一种基于实验辐射数据和Geant4仿真数据寻找失效判据的方法。

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Proton Energy Dependence of SiC Power MOSFET Single-Event Burnout Sensitivity

The proton energy dependence of single-event burnout (SEB) sensitivity of silicon carbide (SiC) power MOSFETs is studied. The experimental results show that SEB is dependent on the primary proton energy and the drain bias voltage applied during irradiation. The secondary particles, produced by the nuclear reactions between primary particles and device materials, are studied using Geant4 simulations. A method for finding the criteria for the failure based on experimental radiation data and Geant4 simulation data is presented.

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来源期刊

IEEE Transactions on Nuclear Science 工程技术-工程：电子与电气

CiteScore

3.70

自引率

27.80%

发文量

314

审稿时长

6.2 months

期刊介绍： The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years. The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.