Long wavelength InAs/InAsSb photodetector with electron and hole barriers

We report on a long-wavelength InAs/InAsSb photodetector with electron and hole barriers. The as-grown sample exhibits very high structural quality. At 77 K, the 50% cutoff wavelength is $8.67\mu m$. The shot noise limited detectivity $D^{\star }$ is 1.09 × 10¹¹ cm$\cdot H{z}^{1/2}$/W for the peak wavelength of $7.42\mu m$ at 77 K and is 5.14 × 10¹⁰ cm$\cdot H{z}^{1/2}$/W for the peak wavelength of $7.46\mu m$ at 100 K. The device can work up to 120 K.