低漏高阻电压GaN-on-GaN肖特基二极管的TMAH表面处理

Power electronic devices and components Pub Date : 2025-04-23 DOI:10.1016/j.pedc.2025.100092

Vishwajeet Maurya , Daniel Alquier , Hala El Rammouz , Pedro Fernandes Paes Pinto Rocha , Thomas Kaltsounis , Eugénie Martinez , Florian Bartoli , Eric Frayssinet , Yvon Cordier , Matthew Charles , Julien Buckley

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引用次数: 0

摘要

在本研究中，通过I-V和C-V表征，研究了TMAH和HF表面处理对GaN-on-GaN肖特基二极管电特性的影响。与HF处理相比，TMAH表面处理可以改善器件的反向特性，并将击穿电压（BV）提高近200 V。额外的XPS表征表明，由于TMAH处理，表面的O和C浓度都降低了。当与适当的边缘终止技术相结合时，这种方法可以帮助实现更接近理论极限的击穿电压。

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Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment

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Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment

In this study, the impact of surface treatment by TMAH and HF on the electrical characteristics of GaN-on-GaN Schottky diodes is examined through I–V and C–V characterizations. A TMAH surface treatment leads to an improvement in the reverse characteristics of the devices and improvement in breakdown voltage (BV) by almost 200 V compared to HF treatment. Additional XPS characterizations reveal a reduction in both O and C concentration from the surface due to TMAH treatment. When combined with proper edge termination techniques, this approach can help achieve breakdown voltages that are closer to the theoretical limits.

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来源期刊

Power electronic devices and components Hardware and Architecture, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Safety, Risk, Reliability and Quality

CiteScore

2.00

自引率

0.00%

发文量

审稿时长

80 days