Tb对高压合成bifeo3基陶瓷的磁性、声子和微观结构的影响

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
D. A. Salamatin, I. E. Kostyleva, S. G. Lyapin, A. V. Semeno, L. F. Kulikova, S. E. Kichanov, A. P. Novikov, A. N. Azarevich, P. V. Enkovich, A. V. Bokov, B. R. Rezyapov, D. P. Kozlenko, A. V. Tsvyashchenko
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引用次数: 0

摘要

化学改性是获得具有技术应用所需性能的功能材料的有效方法。本文研究了用Tb离子部分取代Bi的高压制备BiFeO \(_3\)化合物。研究了含有\(x =\) 0.05、0.1和0.3的Bi \(_{1-x}\) Tb \(_x\) FeO \(_3\)化合物的微观结构、声子模式和宏观磁性能。结果表明,所制得的块状陶瓷在微应变减少的情况下结晶为纯菱形(\(x =\) 0.05和0.1)或正交(\(x =\) 0.3)结构。晶体结构内的Tb离子和高压退火对菱形相声子模式的影响很小,但与原始BiFeO相比,磁性能得到改善\(_3\)。讨论了化学修饰和高压退火对自旋摆线抑制和弱铁磁性出现的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Enhanced magnetic properties, phonon and microstructure effects by Tb in the high-pressure synthesized BiFeO3-based ceramics

Chemical modification is an effective method for obtaining functional materials with desired properties for technological applications. In this work, the high-pressure prepared BiFeO\(_3\) compounds with partial substitution of Bi by Tb ions were studied. The microstructures, phonon modes, and macroscopic magnetic properties of the Bi\(_{1-x}\)Tb\(_x\)FeO\(_3\) compounds with \(x =\) 0.05, 0.1, and 0.3 were investigated. It was demonstrated that the obtained bulk ceramics crystallized in pure rhombohedral (for \(x =\) 0.05 and 0.1) or orthorhombic (\(x =\) 0.3) structure with reduced microstrains. The Tb ions within the crystal structure and high-pressure annealing had a minimal effect on the phonon modes in the rhombohedral phase, but the magnetic properties were improved in comparison to pristine BiFeO\(_3\). The impact of chemical modifications and high-pressure annealing on the suppression of spin cycloid and the appearance of weak ferromagnetism was discussed.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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