Yu Wu , Ling Dong , Zhengyang Qiao , Hongchuan Jiang , Xiaohui Zhao , Yang Li , Jiawei Tian
{"title":"碳、氢共掺杂AlN薄膜晶格结构随温度的演化机理","authors":"Yu Wu , Ling Dong , Zhengyang Qiao , Hongchuan Jiang , Xiaohui Zhao , Yang Li , Jiawei Tian","doi":"10.1016/j.vacuum.2025.114368","DOIUrl":null,"url":null,"abstract":"<div><div>Carbon and hydrogen co-doped AlN thin films (AlN&C-H) are deposited on quartz glass with different N<sub>2</sub>/CH<sub>4</sub> gas flow ratios. The influence of N<sub>2</sub>/CH<sub>4</sub> ratio on the lattice structure of AlN&C-H samples is studied. X-ray diffraction peak of AlN&C-H samples shifts to the left obviously, which illustrates that C and H co-doping lead to lattice expansion of AlN thin films. XPS results indicate the interstitial C-H and the substitutional C-H on the lattice sites of Al. High-resolution TEM images exhibit that carbon and hydrogen co-doping causes mass dislocations. High-temperature annealing is used to repair the defects of AlN&C-H samples. The lattice structure evolution law of AlN&C-H samples with temperature is clarified. X-ray diffraction angle (2<em>θ</em>) is carried out to indicate the lattice structure repair degree. In the temperature range of 700∼1100 °C, the 2<em>θ</em> value increases linearly with temperature. The linear variation relation of 2<em>θ</em> with temperature can be used as a criterion for temperature measurement.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"239 ","pages":"Article 114368"},"PeriodicalIF":3.8000,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Lattice structure evolution mechanism of carbon and hydrogen co-doped AlN thin films with temperature\",\"authors\":\"Yu Wu , Ling Dong , Zhengyang Qiao , Hongchuan Jiang , Xiaohui Zhao , Yang Li , Jiawei Tian\",\"doi\":\"10.1016/j.vacuum.2025.114368\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Carbon and hydrogen co-doped AlN thin films (AlN&C-H) are deposited on quartz glass with different N<sub>2</sub>/CH<sub>4</sub> gas flow ratios. The influence of N<sub>2</sub>/CH<sub>4</sub> ratio on the lattice structure of AlN&C-H samples is studied. X-ray diffraction peak of AlN&C-H samples shifts to the left obviously, which illustrates that C and H co-doping lead to lattice expansion of AlN thin films. XPS results indicate the interstitial C-H and the substitutional C-H on the lattice sites of Al. High-resolution TEM images exhibit that carbon and hydrogen co-doping causes mass dislocations. High-temperature annealing is used to repair the defects of AlN&C-H samples. The lattice structure evolution law of AlN&C-H samples with temperature is clarified. X-ray diffraction angle (2<em>θ</em>) is carried out to indicate the lattice structure repair degree. In the temperature range of 700∼1100 °C, the 2<em>θ</em> value increases linearly with temperature. The linear variation relation of 2<em>θ</em> with temperature can be used as a criterion for temperature measurement.</div></div>\",\"PeriodicalId\":23559,\"journal\":{\"name\":\"Vacuum\",\"volume\":\"239 \",\"pages\":\"Article 114368\"},\"PeriodicalIF\":3.8000,\"publicationDate\":\"2025-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Vacuum\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0042207X25003586\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Vacuum","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0042207X25003586","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Lattice structure evolution mechanism of carbon and hydrogen co-doped AlN thin films with temperature
Carbon and hydrogen co-doped AlN thin films (AlN&C-H) are deposited on quartz glass with different N2/CH4 gas flow ratios. The influence of N2/CH4 ratio on the lattice structure of AlN&C-H samples is studied. X-ray diffraction peak of AlN&C-H samples shifts to the left obviously, which illustrates that C and H co-doping lead to lattice expansion of AlN thin films. XPS results indicate the interstitial C-H and the substitutional C-H on the lattice sites of Al. High-resolution TEM images exhibit that carbon and hydrogen co-doping causes mass dislocations. High-temperature annealing is used to repair the defects of AlN&C-H samples. The lattice structure evolution law of AlN&C-H samples with temperature is clarified. X-ray diffraction angle (2θ) is carried out to indicate the lattice structure repair degree. In the temperature range of 700∼1100 °C, the 2θ value increases linearly with temperature. The linear variation relation of 2θ with temperature can be used as a criterion for temperature measurement.
期刊介绍:
Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences.
A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below.
The scope of the journal includes:
1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes).
2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis.
3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification.
4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.