S. García-Carvajal, V. Ruíz-Santoyo, Y. Fernández-Arteaga, J. C. Carrillo-Sendejas, José-Luis Maldonado, M. C. Arenas-Arrocena
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Synthesis and application of tungsten trioxide nanostructures by doping the active layer of PM6:Y7-based solar cells
Different hydrothermal syntheses of tungsten trioxide (WO3) were used to modify the reaction conditions to achieve morphologies, sizes, and optoelectronic properties suitable for application in organic solar cells (OSCs). The nanostructures showed variations in their size and morphology, as confirmed by TEM. A band-gap modulation was attributed to the temperature and reaction time synthesis parameters. The nanostructures obtained at 180 °C for 4 h were highlighted due to their size range of 14–20 nm and a band-gap energy of about 2.7 eV; these nanostructures were incorporated in the active layer of OSCs based on PM6:Y7 at the concentrations of 0.5%, 1.0%, and 2% by volume. The average power conversion efficiency (PCE) of solar cells was 9.8% (with the best device reaching a PCE of 9.8%) at a 0.5% concentration, while the average PCE for control (without WO3) solar cells was 9.0% (with the best device reaching a PCE of 9.2%), reflecting a 8.9% increase for the doped OSCs.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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