{"title":"基于冗余节点硬化的高性能、高鲁棒性三节点抗扰锁存器","authors":"Qiang Zhao;Qingyi Liu;Xinyi Zhang;Licai Hao;Xin Li;Shengyue Zhang;Chunyu Peng;Zhiting Lin;Xiulong Wu","doi":"10.1109/TVLSI.2025.3535926","DOIUrl":null,"url":null,"abstract":"In response to the issues of high cost, large overhead, and limited node fault tolerance in current latch hardening techniques, this article proposes a latch circuit resistant to triple-node-upset (TNU) based on redundant-node hardening technology. This latch comprises eight 1P2N modules interlocked, with its output isolated by two levels of C-elements (CEs), achieving tolerance to TNU. The performance of the redundant-node reinforcement TNU tolerant latch (RNRTTL) was simulated and verified using CMOS 65 nm technology. The simulation results indicate that the RNRTTL circuit has a D-Q delay of 14.14 ps, static power consumption of <inline-formula> <tex-math>$4.03~\\mu $ </tex-math></inline-formula>w, an area of <inline-formula> <tex-math>$32.87~\\mu $ </tex-math></inline-formula>m2, and an area-static power-D–Q delay-product (APDP) of 1873, respectively. Compared to the triple-node upset tolerant latches TTLL, TNU-latch, TNURL, and HLTNURL reported in the current literature, the proposed latch demonstrates an average reduction of 219.9%, 164.9%, 150.7%, and 2464.8% in D-Q delay, static power consumption, area, and APDP, respectively, indicating that the RNRTTL latch has superior comprehensive performance; furthermore, a series of 2000 Monte Carlo (MC) simulations on the node group <inline-formula> <tex-math>$\\langle $ </tex-math></inline-formula>Q, X0, X<inline-formula> <tex-math>$8\\rangle $ </tex-math></inline-formula> reveal that the proposed latch circuit possesses good stability, making it suitable for harsh radiation environments.","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":"33 5","pages":"1373-1383"},"PeriodicalIF":2.8000,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A High-Performance and High-Robustness Triple-Node-Upset Tolerant Latch Based on Redundant-Node Hardening\",\"authors\":\"Qiang Zhao;Qingyi Liu;Xinyi Zhang;Licai Hao;Xin Li;Shengyue Zhang;Chunyu Peng;Zhiting Lin;Xiulong Wu\",\"doi\":\"10.1109/TVLSI.2025.3535926\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In response to the issues of high cost, large overhead, and limited node fault tolerance in current latch hardening techniques, this article proposes a latch circuit resistant to triple-node-upset (TNU) based on redundant-node hardening technology. This latch comprises eight 1P2N modules interlocked, with its output isolated by two levels of C-elements (CEs), achieving tolerance to TNU. The performance of the redundant-node reinforcement TNU tolerant latch (RNRTTL) was simulated and verified using CMOS 65 nm technology. The simulation results indicate that the RNRTTL circuit has a D-Q delay of 14.14 ps, static power consumption of <inline-formula> <tex-math>$4.03~\\\\mu $ </tex-math></inline-formula>w, an area of <inline-formula> <tex-math>$32.87~\\\\mu $ </tex-math></inline-formula>m2, and an area-static power-D–Q delay-product (APDP) of 1873, respectively. Compared to the triple-node upset tolerant latches TTLL, TNU-latch, TNURL, and HLTNURL reported in the current literature, the proposed latch demonstrates an average reduction of 219.9%, 164.9%, 150.7%, and 2464.8% in D-Q delay, static power consumption, area, and APDP, respectively, indicating that the RNRTTL latch has superior comprehensive performance; furthermore, a series of 2000 Monte Carlo (MC) simulations on the node group <inline-formula> <tex-math>$\\\\langle $ </tex-math></inline-formula>Q, X0, X<inline-formula> <tex-math>$8\\\\rangle $ </tex-math></inline-formula> reveal that the proposed latch circuit possesses good stability, making it suitable for harsh radiation environments.\",\"PeriodicalId\":13425,\"journal\":{\"name\":\"IEEE Transactions on Very Large Scale Integration (VLSI) Systems\",\"volume\":\"33 5\",\"pages\":\"1373-1383\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-02-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Very Large Scale Integration (VLSI) Systems\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10880501/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10880501/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0
摘要
针对当前锁存加固技术成本高、开销大、节点容错能力有限等问题,提出了一种基于冗余节点加固技术的抗三节点扰锁存电路。该锁存器由8个互锁的1P2N模块组成,其输出由两级c -元件(ce)隔离,实现对TNU的容忍。利用CMOS 65nm技术对冗余节点增强容错锁存器(RNRTTL)的性能进行了仿真和验证。仿真结果表明,RNRTTL电路的D-Q延迟为14.14 ps,静态功耗为4.03~\mu $ w,面积为32.87~\mu $ m2,面积-静态功率- D-Q延迟积(APDP)为1873。与现有文献报道的三节点耐扰锁存TTLL、TNU-latch、TNURL和HLTNURL相比,本文提出的锁存在D-Q延迟、静态功耗、面积和APDP方面分别平均降低了219.9%、164.9%、150.7%和2464.8%,表明RNRTTL锁存具有优越的综合性能;此外,在节点群$ $ Q, X0, X $ $8\rangle $ $上的一系列2000蒙特卡罗(MC)仿真表明,所提出的锁存电路具有良好的稳定性,适用于恶劣的辐射环境。
A High-Performance and High-Robustness Triple-Node-Upset Tolerant Latch Based on Redundant-Node Hardening
In response to the issues of high cost, large overhead, and limited node fault tolerance in current latch hardening techniques, this article proposes a latch circuit resistant to triple-node-upset (TNU) based on redundant-node hardening technology. This latch comprises eight 1P2N modules interlocked, with its output isolated by two levels of C-elements (CEs), achieving tolerance to TNU. The performance of the redundant-node reinforcement TNU tolerant latch (RNRTTL) was simulated and verified using CMOS 65 nm technology. The simulation results indicate that the RNRTTL circuit has a D-Q delay of 14.14 ps, static power consumption of $4.03~\mu $ w, an area of $32.87~\mu $ m2, and an area-static power-D–Q delay-product (APDP) of 1873, respectively. Compared to the triple-node upset tolerant latches TTLL, TNU-latch, TNURL, and HLTNURL reported in the current literature, the proposed latch demonstrates an average reduction of 219.9%, 164.9%, 150.7%, and 2464.8% in D-Q delay, static power consumption, area, and APDP, respectively, indicating that the RNRTTL latch has superior comprehensive performance; furthermore, a series of 2000 Monte Carlo (MC) simulations on the node group $\langle $ Q, X0, X$8\rangle $ reveal that the proposed latch circuit possesses good stability, making it suitable for harsh radiation environments.
期刊介绍:
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