Xiaojun Xie, Chao Wei, Xingchen He, Yake Chen, Chenghao Wang, Jihui Sun, Lin Jiang, Jia Ye, Xihua Zou, Wei Pan, Lianshan Yan
{"title":"基于InP-LiNbO3晶圆级集成平台的3.584 Tbps相干接收器芯片","authors":"Xiaojun Xie, Chao Wei, Xingchen He, Yake Chen, Chenghao Wang, Jihui Sun, Lin Jiang, Jia Ye, Xihua Zou, Wei Pan, Lianshan Yan","doi":"10.1038/s41377-025-01821-1","DOIUrl":null,"url":null,"abstract":"<p>The rapid advancement of the thin-film lithium niobate (LiNbO<sub>3</sub>) platform has established it as a premier choice for high-performance photonics integrated circuits. However, the scalability and cost-efficiency of this platform are hindered by the reliance on chip-level fabrication and integration for passive and active components, necessitating a robust wafer-level LiNbO<sub>3</sub> heterogeneous integration platform. Despite its critical role in enabling ultrahigh-speed optical interconnects, as well as optical mmWave/THz sensing and communication, the realization of ultrahigh-speed photodiodes and optical coherent receivers on the LiNbO₃ platform remains an unresolved challenge. This is primarily due to the challenges associated with the large-scale integration of direct-bandgap materials. To address these challenges, we have developed a scalable, high-speed InP-LiNbO₃ wafer-level heterogeneous integration platform. This platform facilitates the fabrication of ultrahigh-speed photodiodes with a bandwidth of 140 GHz, capable of receiving high-quality 100-Gbaud pulse amplitude modulation (PAM4) signals. Moreover, we demonstrate a seven-channel, single-polarization I–Q coherent receiver chip with an aggregate receiving capacity of 3.584 Tbit s<sup>-1</sup>. This coherent receiver exhibits a balanced detection bandwidth of 60 GHz and a common mode rejection ratio (CMRR) exceeding 20 dB. It achieves receiving capacities of 600 Gbit s<sup>-1</sup> λ<sup>-1</sup> with a 100-Gbaud 64-QAM signal and 512 Gbit s<sup>-1</sup> λ<sup>-1</sup> with a 128-Gbaud 16-QAM signal. Furthermore, energy consumption as low as 9.6 fJ bit<sup>-1</sup> and 13.5 fJ bit<sup>-1</sup> is achieved for 200 Gbit s<sup>-1</sup> and 400 Gbit s<sup>-1</sup> capacities, respectively. Our work provides a viable pathway toward enabling Pbps hyperscale data center interconnects, as well as optical mmWave/THz sensing and communication.</p>","PeriodicalId":18069,"journal":{"name":"Light-Science & Applications","volume":"33 1","pages":""},"PeriodicalIF":20.6000,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 3.584 Tbps coherent receiver chip on InP-LiNbO3 wafer-level integration platform\",\"authors\":\"Xiaojun Xie, Chao Wei, Xingchen He, Yake Chen, Chenghao Wang, Jihui Sun, Lin Jiang, Jia Ye, Xihua Zou, Wei Pan, Lianshan Yan\",\"doi\":\"10.1038/s41377-025-01821-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The rapid advancement of the thin-film lithium niobate (LiNbO<sub>3</sub>) platform has established it as a premier choice for high-performance photonics integrated circuits. However, the scalability and cost-efficiency of this platform are hindered by the reliance on chip-level fabrication and integration for passive and active components, necessitating a robust wafer-level LiNbO<sub>3</sub> heterogeneous integration platform. Despite its critical role in enabling ultrahigh-speed optical interconnects, as well as optical mmWave/THz sensing and communication, the realization of ultrahigh-speed photodiodes and optical coherent receivers on the LiNbO₃ platform remains an unresolved challenge. This is primarily due to the challenges associated with the large-scale integration of direct-bandgap materials. To address these challenges, we have developed a scalable, high-speed InP-LiNbO₃ wafer-level heterogeneous integration platform. This platform facilitates the fabrication of ultrahigh-speed photodiodes with a bandwidth of 140 GHz, capable of receiving high-quality 100-Gbaud pulse amplitude modulation (PAM4) signals. Moreover, we demonstrate a seven-channel, single-polarization I–Q coherent receiver chip with an aggregate receiving capacity of 3.584 Tbit s<sup>-1</sup>. This coherent receiver exhibits a balanced detection bandwidth of 60 GHz and a common mode rejection ratio (CMRR) exceeding 20 dB. It achieves receiving capacities of 600 Gbit s<sup>-1</sup> λ<sup>-1</sup> with a 100-Gbaud 64-QAM signal and 512 Gbit s<sup>-1</sup> λ<sup>-1</sup> with a 128-Gbaud 16-QAM signal. Furthermore, energy consumption as low as 9.6 fJ bit<sup>-1</sup> and 13.5 fJ bit<sup>-1</sup> is achieved for 200 Gbit s<sup>-1</sup> and 400 Gbit s<sup>-1</sup> capacities, respectively. Our work provides a viable pathway toward enabling Pbps hyperscale data center interconnects, as well as optical mmWave/THz sensing and communication.</p>\",\"PeriodicalId\":18069,\"journal\":{\"name\":\"Light-Science & Applications\",\"volume\":\"33 1\",\"pages\":\"\"},\"PeriodicalIF\":20.6000,\"publicationDate\":\"2025-04-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Light-Science & Applications\",\"FirstCategoryId\":\"1089\",\"ListUrlMain\":\"https://doi.org/10.1038/s41377-025-01821-1\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Light-Science & Applications","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.1038/s41377-025-01821-1","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
A 3.584 Tbps coherent receiver chip on InP-LiNbO3 wafer-level integration platform
The rapid advancement of the thin-film lithium niobate (LiNbO3) platform has established it as a premier choice for high-performance photonics integrated circuits. However, the scalability and cost-efficiency of this platform are hindered by the reliance on chip-level fabrication and integration for passive and active components, necessitating a robust wafer-level LiNbO3 heterogeneous integration platform. Despite its critical role in enabling ultrahigh-speed optical interconnects, as well as optical mmWave/THz sensing and communication, the realization of ultrahigh-speed photodiodes and optical coherent receivers on the LiNbO₃ platform remains an unresolved challenge. This is primarily due to the challenges associated with the large-scale integration of direct-bandgap materials. To address these challenges, we have developed a scalable, high-speed InP-LiNbO₃ wafer-level heterogeneous integration platform. This platform facilitates the fabrication of ultrahigh-speed photodiodes with a bandwidth of 140 GHz, capable of receiving high-quality 100-Gbaud pulse amplitude modulation (PAM4) signals. Moreover, we demonstrate a seven-channel, single-polarization I–Q coherent receiver chip with an aggregate receiving capacity of 3.584 Tbit s-1. This coherent receiver exhibits a balanced detection bandwidth of 60 GHz and a common mode rejection ratio (CMRR) exceeding 20 dB. It achieves receiving capacities of 600 Gbit s-1 λ-1 with a 100-Gbaud 64-QAM signal and 512 Gbit s-1 λ-1 with a 128-Gbaud 16-QAM signal. Furthermore, energy consumption as low as 9.6 fJ bit-1 and 13.5 fJ bit-1 is achieved for 200 Gbit s-1 and 400 Gbit s-1 capacities, respectively. Our work provides a viable pathway toward enabling Pbps hyperscale data center interconnects, as well as optical mmWave/THz sensing and communication.