CsPbI2Br钙钛矿x射线探测器图像噪声的原位分析

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-04-21 DOI:10.1016/j.sna.2025.116605

Kuo Sun , Ting Han , Hao liu , Haiqing Qin , Linqian Han , Guoqiang Tang , Haijun Qiu , Yong Xiang , Xinyu Wang

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引用次数: 0

摘要

钙钛矿x射线平板探测器具有高灵敏度和低剂量要求的特点，被认为是下一代x射线探测器的有希望的候选者。然而，实现足够的图像分辨率仍然是一个相当大的挑战。在本文中，我们采用喷涂工艺制作了高分辨率像素尺寸为100 × 100 μm²的直接x射线探测器。该检测器具有低检出限（50 μC Gyair s−1）和高灵敏度（2222 μC Gyair−1 cm−2）的优良性能。采用背景图像减法和中值滤波技术，得到清晰的图像。采用原位检测技术研究了像素级CsPbI2Br钙钛矿器件的光电流特性。结合TFT电路分析和电学仿真，得出图像噪声的主要来源是像素级的光电流波动。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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In-situ analysis of image noise in CsPbI2Br perovskite X-ray detectors

The perovskite X-ray flat panel detector, characterized by its high sensitivity and low dose requirements, is considered a promising candidate for the next generation of X-ray detectors. However, achieving adequate image resolution remains a considerable challenge. In this paper, we employ a spraying process to fabricate a direct X-ray detector with a high-resolution pixel size of 100 × 100 μm². The detector demonstrates excellent performance characterized by low a detection limit of 50 nGy_air s⁻¹ and high sensitivity (2222 μC Gy_air⁻¹ cm⁻²). By employing background image subtraction and median filtering techniques, a clear image is obtained. The photocurrent characteristics of the pixel-level CsPbI₂Br perovskite device are investigated using in-situ detection techniques. By integrating TFT circuit analysis and electrical simulations, it is concluded that the primary source of image noise originates from fluctuations in photocurrent at the pixel level.

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...