Photoluminescence Properties of Ion-Implanted Er3+ Defects in 4H-SiCOI for Integrated Quantum Photonics

Atomic-size defects, known as color centers, hosted in solid-state materials, such as silicon carbide and diamond, are promising candidates for integration into chip-scale quantum systems. Specifically, the incorporation of these color centers within photonic integrated circuits may enable precise control over their inherent photophysical properties through strong light-matter interaction. Here, we investigate ion-implanted erbium (Er³⁺) defects embedded in nanometric thin-film 4H-silicon-carbide-on-insulator (4H-SiCOI). Optimized implantation conditions and thermal annealing processes designed to enhance the photoluminescence excitation (PLE) emission characteristics of the Er³⁺ defect are reported. By examining key properties such as photoluminescence intensity, optical lifetime, and polarization, we present an analysis of ensemble Er³⁺ defects within 4H-SiCOI, providing insights into their potential for future quantum applications.