Sajib Biswas, Niladri Sekhar Kander, Safikul Islam, Amal Kumar Das
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Observation of room-temperature robust three-terminal Hanle signal in Co2TiSi/SiO2/n-Si Heterostructure
We have studied the spin injection properties of Co2TiSi (CTS)/SiO2/n-Si heterostructure by measuring the three-terminal (3T) Hanle signal. We used n-type silicon as the semiconductor and Co2TiSi Heusler alloy as the electrode to create a standard three-terminal Hanle device for measuring the spin injection and detection. The structural and magnetic measurements verify that the Heusler alloy is growing properly. A sizable Hanle signal at room temperature verified the ferromagnetic to semiconductor spin injection. The computed spin-resistance area confirms that the accumulation took place in the semiconductor channel as opposed to the interface states. This heterostructure’s measured spin diffusion length LSD (249 nm) and spin life time τ (168 ps) are quite impressive at room temperature, which makes Co2TiSi a promising option for upcoming spintronics applications.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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