钴取代对锰锌尖晶石铁氧体复合材料电磁响应的影响

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Salman Naeem Khan , Amna Mir , Ihtsham Saeed , Ishrat Sultana , Hafiz Tariq Masood
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引用次数: 0

摘要

本研究采用溶胶-凝胶自燃烧法合成了x=0、0.1、0.2、0.3、0.4时掺杂钴的锰锌铁氧体Mn0.5Zn0.5-xCoxFe2O4。利用x射线衍射对制备样品进行了结构研究,证实了未掺杂样品形成了单相立方尖晶石结构。在少量样品中存在Fe2O3的情况下,用XRD观察了钴掺杂的影响。这一相进一步减少,钴开始出现在样品中。利用拉曼光谱研究了不同的振动模式。本研究的主要目的是测量Co掺杂在Mn和Zn铁氧体中在1GHz到18GHz微波频率范围内的响应。为此,用矢量网络分析仪(VNA)对制备的铁氧体进行了表征,使用同轴空气电池测量介电常数、磁导率和介电损耗正切。与钴的协同响应在宽频带上表现出优越的电磁反射。这些介电特性对雷达和国防应用很有用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of cobalt substitution on electromagnetic response of Manganese-Zinc spinel ferrite composite
In this study, cobalt doped Manganese-Zinc ferrites Mn0.5Zn0.5-xCoxFe2O4 as x=0,0.1,0.2,0.3,0.4 are synthesized using the sol–gel auto-combustion method. Structural study of as-prepared samples is done using X-ray diffraction and confirms the formation of single-phase cubic spinel structure of the undoped sample. The effect of cobalt doping is observed in XRD with the presence of Fe2O3 in a few samples. This phase is further reduced, and the cobalt starts to appear in the sample. Different vibrational modes are studied using Raman spectroscopy. The main aim of this study is to measure the response of the Co doping in Mn and Zn ferrite in microwave frequency region from 1GHz to 18GHz. For this purpose, the prepared ferrites were characterized with a Vector network analyzer (VNA) using a coaxial air cell to measure the permittivity, permeability, and dielectric loss tangent. The synergetic response shows superior electromagnetic reflection over broad frequency bandwidth with cobalt. These dielectric properties are useful for radar and defense applications.
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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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