High-efficiency phase transition of 2H-molybdenum ditelluride films on diverse substrates

The synthesis of p-type two-dimensional (2D) semiconductor 2H-MoTe2 films on various dielectric substrates is essential for realizing multilayer architectures for electronic and optoelectronic devices. However, achieving high-efficiency and complete 2H phase fabrication on diverse substrates is challenging. In this study, a multipoint nucleation approach was proposed for achieving controlled phase transitions of MoTe2 films via space confinement in the CVD growth process. This interstitial environment limited Te evaporation and considerably enhanced the reactant collision probability, leading to a high nucleation density of 2H-MoTe2 films. Using the proposed approach, large-area 2H-MoTe2 films were fabricated in ∼30 min. This high-efficiency phase-transition approach has promising implications for the industrial fabrication of large-scale 2D semiconductor films and other potential applications in electronic and optoelectronic devices.