{"title":"Sb2Se3薄膜太阳能电池中载流子的厚度依赖性输运","authors":"Zi-Xiu Cao, Chuan-Yu Liu, Jian-Peng Li, Jia-Bin Dong, Shi-Hao Hu, Wei-Huang Wang, Xu Wu, Yi Zhang","doi":"10.1007/s12598-024-03171-0","DOIUrl":null,"url":null,"abstract":"<div><p>The structural design of n-i-p in antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) thin film solar cells can effectively improve the low carrier collection efficiency caused by the lower doping concentration of Sb<sub>2</sub>Se<sub>3</sub>. However, the unideal carrier transport ability of the intrinsic light-absorbing layer remains a major limitation for its power conversion efficiency improvement. Herein, it is discovered that the carrier transport in Sb<sub>2</sub>Se<sub>3</sub> thin films strongly depends on the film thickness of the absorber layer in n-i-p structure. By exploring the carrier transport mechanism under different thicknesses of light-absorbing layers, a suitable absorber layer with thickness of 550 nm is demonstrated can effectively separate, transport, and extract photogenerated carriers in Sb<sub>2</sub>Se<sub>3</sub> solar cells. Finally, the vapor transport deposition processed Sb<sub>2</sub>Se<sub>3</sub> solar cells achieve the highest PCE of 7.62% with a short-circuit current density of 30.71 mA·cm<sup>−2</sup>. This finding provides a constructive guidance for the future researches on Sb<sub>2</sub>Se<sub>3</sub> thin film solar cells with n-i-p structure.</p><h3>Graphical abstract</h3>\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":749,"journal":{"name":"Rare Metals","volume":"44 5","pages":"3051 - 3059"},"PeriodicalIF":9.6000,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thickness-dependent carriers transport in Sb2Se3 thin film solar cells\",\"authors\":\"Zi-Xiu Cao, Chuan-Yu Liu, Jian-Peng Li, Jia-Bin Dong, Shi-Hao Hu, Wei-Huang Wang, Xu Wu, Yi Zhang\",\"doi\":\"10.1007/s12598-024-03171-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The structural design of n-i-p in antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) thin film solar cells can effectively improve the low carrier collection efficiency caused by the lower doping concentration of Sb<sub>2</sub>Se<sub>3</sub>. However, the unideal carrier transport ability of the intrinsic light-absorbing layer remains a major limitation for its power conversion efficiency improvement. Herein, it is discovered that the carrier transport in Sb<sub>2</sub>Se<sub>3</sub> thin films strongly depends on the film thickness of the absorber layer in n-i-p structure. By exploring the carrier transport mechanism under different thicknesses of light-absorbing layers, a suitable absorber layer with thickness of 550 nm is demonstrated can effectively separate, transport, and extract photogenerated carriers in Sb<sub>2</sub>Se<sub>3</sub> solar cells. Finally, the vapor transport deposition processed Sb<sub>2</sub>Se<sub>3</sub> solar cells achieve the highest PCE of 7.62% with a short-circuit current density of 30.71 mA·cm<sup>−2</sup>. This finding provides a constructive guidance for the future researches on Sb<sub>2</sub>Se<sub>3</sub> thin film solar cells with n-i-p structure.</p><h3>Graphical abstract</h3>\\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":749,\"journal\":{\"name\":\"Rare Metals\",\"volume\":\"44 5\",\"pages\":\"3051 - 3059\"},\"PeriodicalIF\":9.6000,\"publicationDate\":\"2025-02-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Rare Metals\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12598-024-03171-0\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Rare Metals","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12598-024-03171-0","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Thickness-dependent carriers transport in Sb2Se3 thin film solar cells
The structural design of n-i-p in antimony selenide (Sb2Se3) thin film solar cells can effectively improve the low carrier collection efficiency caused by the lower doping concentration of Sb2Se3. However, the unideal carrier transport ability of the intrinsic light-absorbing layer remains a major limitation for its power conversion efficiency improvement. Herein, it is discovered that the carrier transport in Sb2Se3 thin films strongly depends on the film thickness of the absorber layer in n-i-p structure. By exploring the carrier transport mechanism under different thicknesses of light-absorbing layers, a suitable absorber layer with thickness of 550 nm is demonstrated can effectively separate, transport, and extract photogenerated carriers in Sb2Se3 solar cells. Finally, the vapor transport deposition processed Sb2Se3 solar cells achieve the highest PCE of 7.62% with a short-circuit current density of 30.71 mA·cm−2. This finding provides a constructive guidance for the future researches on Sb2Se3 thin film solar cells with n-i-p structure.
期刊介绍：
Rare Metals is a monthly peer-reviewed journal published by the Nonferrous Metals Society of China. It serves as a platform for engineers and scientists to communicate and disseminate original research articles in the field of rare metals. The journal focuses on a wide range of topics including metallurgy, processing, and determination of rare metals. Additionally, it showcases the application of rare metals in advanced materials such as superconductors, semiconductors, composites, and ceramics.
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