Single-event burnout evaluation in high voltage lateral and quasi-lateral diamond MOSFETs

Studies have shown that ion-induced Single-Event Burnout (SEB) corresponds to a second breakdown event, driven by mesoplasma formation and resulting in catastrophically thermal failure due to the electric field profile of target device. Diamond, due to its excellent thermal properties, is a promising candidate for Single-Event Burnout (SEB) robust applications. In this paper, the SEB phenomenon in a quasi-lateral diamond MOSFET and its more implementable baseline structure lateral diamond MOSFET is studied utilizing a 3-dimensional TCAD device simulator with the best-known diamond material parameters and silver ion model (1289 MeV). Results demonstrate that diamond's exceptional thermal conductivity suppresses mesoplasma proliferation, enabling device survival under heavy ion strikes up to 600 V for the baseline structure and 800 V for the quasi-lateral configuration, showing SEB robustness more than half of the actual blocking capability. Simulations indicate that mesoplasma formation is influenced by lateral and vertical electric field interactions, leading to off-path burnout risks. In addition, 2DHG mobility shows a negligible effect on mesoplasma temperature. The findings suggest the promising potential of diamond power devices under radiation environments.