Yi Han, Jingxuan Sun, Benjamin Richstein, Andreas Grenmyr, Jin-Hee Bae, Frederic Allibert, Ionut Radu, Detlev Grützmacher, Joachim Knoch and Qing-Tai Zhao*,
{"title":"低温下量子和神经形态计算的高能效存储单元","authors":"Yi Han, Jingxuan Sun, Benjamin Richstein, Andreas Grenmyr, Jin-Hee Bae, Frederic Allibert, Ionut Radu, Detlev Grützmacher, Joachim Knoch and Qing-Tai Zhao*, ","doi":"10.1021/acs.nanolett.4c0585510.1021/acs.nanolett.4c05855","DOIUrl":null,"url":null,"abstract":"<p >Efficient computing in cryogenic environments, including classical von Neumann, quantum, and neuromorphic systems, is poised to transform big data processing. The quest for high-density, energy-efficient memories continues, with cryogenic memory solutions still unclear. We present a Cryogenic Capacitorless Random Access Memory (C<sup>2</sup>RAM) cell using advanced Si technology, which enhances storage density through its scalability and multistate capability. Remarkably, the C<sup>2</sup>RAM maintains data for over a decade with its extended retention times and offers potential as an artificial synapse. This positions C<sup>2</sup>RAM as an ideal nonvolatile memory candidate for cryogenic computing applications and emerging quantum technologies.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"25 16","pages":"6374–6381 6374–6381"},"PeriodicalIF":9.1000,"publicationDate":"2025-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acs.nanolett.4c05855","citationCount":"0","resultStr":"{\"title\":\"An Energy Efficient Memory Cell for Quantum and Neuromorphic Computing at Low Temperatures\",\"authors\":\"Yi Han, Jingxuan Sun, Benjamin Richstein, Andreas Grenmyr, Jin-Hee Bae, Frederic Allibert, Ionut Radu, Detlev Grützmacher, Joachim Knoch and Qing-Tai Zhao*, \",\"doi\":\"10.1021/acs.nanolett.4c0585510.1021/acs.nanolett.4c05855\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Efficient computing in cryogenic environments, including classical von Neumann, quantum, and neuromorphic systems, is poised to transform big data processing. The quest for high-density, energy-efficient memories continues, with cryogenic memory solutions still unclear. We present a Cryogenic Capacitorless Random Access Memory (C<sup>2</sup>RAM) cell using advanced Si technology, which enhances storage density through its scalability and multistate capability. Remarkably, the C<sup>2</sup>RAM maintains data for over a decade with its extended retention times and offers potential as an artificial synapse. This positions C<sup>2</sup>RAM as an ideal nonvolatile memory candidate for cryogenic computing applications and emerging quantum technologies.</p>\",\"PeriodicalId\":53,\"journal\":{\"name\":\"Nano Letters\",\"volume\":\"25 16\",\"pages\":\"6374–6381 6374–6381\"},\"PeriodicalIF\":9.1000,\"publicationDate\":\"2025-04-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://pubs.acs.org/doi/epdf/10.1021/acs.nanolett.4c05855\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nano Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acs.nanolett.4c05855\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Letters","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.nanolett.4c05855","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
An Energy Efficient Memory Cell for Quantum and Neuromorphic Computing at Low Temperatures
Efficient computing in cryogenic environments, including classical von Neumann, quantum, and neuromorphic systems, is poised to transform big data processing. The quest for high-density, energy-efficient memories continues, with cryogenic memory solutions still unclear. We present a Cryogenic Capacitorless Random Access Memory (C2RAM) cell using advanced Si technology, which enhances storage density through its scalability and multistate capability. Remarkably, the C2RAM maintains data for over a decade with its extended retention times and offers potential as an artificial synapse. This positions C2RAM as an ideal nonvolatile memory candidate for cryogenic computing applications and emerging quantum technologies.
期刊介绍:
Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including:
- Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale
- Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies
- Modeling and simulation of synthetic, assembly, and interaction processes
- Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance
- Applications of nanoscale materials in living and environmental systems
Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.