A microrod-based photoconductivity enhancement in copper antimony selenide PIN photodetector

A P-type semiconductor namely CuSbSe₂ developed in the recent times has acquired a lot of attention because of its low cost promising optoelectronic features and widely abundant precursor elements. This study explores CuSbSe₂ photodetector based on a microrod designed with the help of simple separation approach from crystals which have 150–300 μm thickness. In comparison to thin film-based device (D1), microrod-based device (D2) performs more efficiently as it is more responsive and operates in a self-bias manner. D2 displayed an enhanced responsivity with a value of 0.27 A/W with 31% of EQE (External Quantum Efficiency) at 1064 nm wavelength and 15 mW/cm² power density. Moreover 532 nm, 0.038 A/W responsivity with 9% EQE was achieved by D2 under 32 mW/cm². The time taken by D2 to respond or recover at 1064 nm was 68.7 and 35.1 ms and at 532 nm was 15.7 and 41.2 ms. This operation is self-powered and is implemented at 0.02 V which is a lower value of bias. The findings of this research will be reveal that microrods of CuSbSe₂ offer significantly enhanced performance and responds at a faster pace with higher sensitivity. The above properties find them apt for low cost, self-powered optoelectronic applications.