M. S. Tivanov, V. A. Gevorgyan, A. A. Zgliui, K. P. Haroyan, V. F. Gremenok, D. V. Zhyhulin, M. Dong, M. Khalid Hossain, M. I. Sayyed, T. I. Zubar, D. I. Tishkevich, A. V. Trukhanov
{"title":"离散真空热蒸发法制备碲化镉薄膜的结构和光学性质","authors":"M. S. Tivanov, V. A. Gevorgyan, A. A. Zgliui, K. P. Haroyan, V. F. Gremenok, D. V. Zhyhulin, M. Dong, M. Khalid Hossain, M. I. Sayyed, T. I. Zubar, D. I. Tishkevich, A. V. Trukhanov","doi":"10.1007/s10854-025-14769-0","DOIUrl":null,"url":null,"abstract":"<div><p>CdTe films were obtained via discrete vacuum thermal evaporation (DVTE) with CdCl<sub>2</sub> treatment and annealing in an air atmosphere. The CdTe samples were investigated using several techniques: energy-dispersive X-ray spectroscopy, scanning electron microscopy, atomic-force microscopy, grazing incidence X-ray diffraction, and Raman analysis. It has been observed that the samples of CdTe films have a cubic structure with predominant orientation (111), a smooth surface without pores or cracks, and the stoichiometric Cd/Te ratio approaches 1. The band gap width is 1.51 eV, and the Urbach energy is in the range of 13–25 meV, increasing for CdTe thin films synthesized with CdCl<sub>2</sub>. It has been shown that films based on CdTe fabricated via DVTE with CdCl<sub>2</sub> treatment and annealing in an air atmosphere at 400 °C predominantly crystallize in the cubic structure of CdTe, have good structural and topographic parameters, are low defectless, have an optimal band gap value, and can be applied as a perspective material for high-efficiency solar cell creation.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structure and optical properties of CdTe thin films obtained via discrete vacuum thermal evaporation\",\"authors\":\"M. S. Tivanov, V. A. Gevorgyan, A. A. Zgliui, K. P. Haroyan, V. F. Gremenok, D. V. Zhyhulin, M. Dong, M. Khalid Hossain, M. I. Sayyed, T. I. Zubar, D. I. Tishkevich, A. V. Trukhanov\",\"doi\":\"10.1007/s10854-025-14769-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>CdTe films were obtained via discrete vacuum thermal evaporation (DVTE) with CdCl<sub>2</sub> treatment and annealing in an air atmosphere. The CdTe samples were investigated using several techniques: energy-dispersive X-ray spectroscopy, scanning electron microscopy, atomic-force microscopy, grazing incidence X-ray diffraction, and Raman analysis. It has been observed that the samples of CdTe films have a cubic structure with predominant orientation (111), a smooth surface without pores or cracks, and the stoichiometric Cd/Te ratio approaches 1. The band gap width is 1.51 eV, and the Urbach energy is in the range of 13–25 meV, increasing for CdTe thin films synthesized with CdCl<sub>2</sub>. It has been shown that films based on CdTe fabricated via DVTE with CdCl<sub>2</sub> treatment and annealing in an air atmosphere at 400 °C predominantly crystallize in the cubic structure of CdTe, have good structural and topographic parameters, are low defectless, have an optimal band gap value, and can be applied as a perspective material for high-efficiency solar cell creation.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 12\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-14769-0\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14769-0","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Structure and optical properties of CdTe thin films obtained via discrete vacuum thermal evaporation
CdTe films were obtained via discrete vacuum thermal evaporation (DVTE) with CdCl2 treatment and annealing in an air atmosphere. The CdTe samples were investigated using several techniques: energy-dispersive X-ray spectroscopy, scanning electron microscopy, atomic-force microscopy, grazing incidence X-ray diffraction, and Raman analysis. It has been observed that the samples of CdTe films have a cubic structure with predominant orientation (111), a smooth surface without pores or cracks, and the stoichiometric Cd/Te ratio approaches 1. The band gap width is 1.51 eV, and the Urbach energy is in the range of 13–25 meV, increasing for CdTe thin films synthesized with CdCl2. It has been shown that films based on CdTe fabricated via DVTE with CdCl2 treatment and annealing in an air atmosphere at 400 °C predominantly crystallize in the cubic structure of CdTe, have good structural and topographic parameters, are low defectless, have an optimal band gap value, and can be applied as a perspective material for high-efficiency solar cell creation.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.