卫星内光链路56 gb /s电吸收调制器驱动的辐射评估

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nuclear Science Pub Date : 2025-02-19 DOI:10.1109/TNS.2025.3543637

Kieran De Bruyn;Arijit Karmakar;Warre Geeroms;Michael Vanhoecke;Laurens Bogaert;Günther Roelkens;Alan Naughton;David Mackey;Jeffrey Prinzie;Paul Leroux;Johan Bauwelinck

{"title":"卫星内光链路56 gb /s电吸收调制器驱动的辐射评估","authors":"Kieran De Bruyn;Arijit Karmakar;Warre Geeroms;Michael Vanhoecke;Laurens Bogaert;Günther Roelkens;Alan Naughton;David Mackey;Jeffrey Prinzie;Paul Leroux;Johan Bauwelinck","doi":"10.1109/TNS.2025.3543637","DOIUrl":null,"url":null,"abstract":"This article presents a radiation-hardened-by-process 56-Gb/s electro-absorption modulator (EAM) driver designed in a 130-nm silicon germanium (SiGe) bipolar complementary metal oxide semiconductor (BiCMOS) technology for application in optical intrasatellite links. Details of the driver architecture are provided, along with the electrical and optical measurement setups used to evaluate its performance. To assess the vulnerability of the driver against radiation exposure in the space environment, samples were irradiated with X-rays up to a total accumulated dose of 1.2 Mrad(Si), simulating the effects of total ionizing dose (TID) in orbit. Furthermore, heavy-ion experiments corroborated the driver’s resilience to single-event transients (SETs) across a range of linear energy transfers (LETs) from 20 to 65.2 MeV cm2/mg, with a particle fluence of <inline-formula> <tex-math>$1.2\\times 10^{7}$ </tex-math></inline-formula> cm−2. No single-event latchup (SEL) was observed in the irradiated samples during the heavy-ion exposure.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1228-1236"},"PeriodicalIF":1.9000,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Radiation Assessment of a 56-Gb/s Electro-Absorption Modulator Driver for Optical Intrasatellite Links\",\"authors\":\"Kieran De Bruyn;Arijit Karmakar;Warre Geeroms;Michael Vanhoecke;Laurens Bogaert;Günther Roelkens;Alan Naughton;David Mackey;Jeffrey Prinzie;Paul Leroux;Johan Bauwelinck\",\"doi\":\"10.1109/TNS.2025.3543637\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article presents a radiation-hardened-by-process 56-Gb/s electro-absorption modulator (EAM) driver designed in a 130-nm silicon germanium (SiGe) bipolar complementary metal oxide semiconductor (BiCMOS) technology for application in optical intrasatellite links. Details of the driver architecture are provided, along with the electrical and optical measurement setups used to evaluate its performance. To assess the vulnerability of the driver against radiation exposure in the space environment, samples were irradiated with X-rays up to a total accumulated dose of 1.2 Mrad(Si), simulating the effects of total ionizing dose (TID) in orbit. Furthermore, heavy-ion experiments corroborated the driver’s resilience to single-event transients (SETs) across a range of linear energy transfers (LETs) from 20 to 65.2 MeV cm2/mg, with a particle fluence of <inline-formula> <tex-math>$1.2\\\\times 10^{7}$ </tex-math></inline-formula> cm−2. No single-event latchup (SEL) was observed in the irradiated samples during the heavy-ion exposure.\",\"PeriodicalId\":13406,\"journal\":{\"name\":\"IEEE Transactions on Nuclear Science\",\"volume\":\"72 4\",\"pages\":\"1228-1236\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2025-02-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Nuclear Science\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10892246/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nuclear Science","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10892246/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本文提出了一种采用130纳米硅锗双极互补金属氧化物半导体（BiCMOS）技术设计的56 gb /s辐射强化电吸收调制器（EAM）驱动器，用于星内光学链路。提供了驱动架构的详细信息，以及用于评估其性能的电气和光学测量设置。为了评估驱动器在空间环境中对辐射暴露的脆弱性，对样品进行了高达1.2 Mrad（Si）的总累积剂量的x射线照射，模拟了轨道上总电离剂量（TID）的影响。此外，重离子实验证实了驱动器在20至65.2 MeV cm2/mg的线性能量转移（let）范围内对单事件瞬态（SETs）的弹性，粒子影响为1.2\ × 10^{7}$ cm - 2。在重离子暴露过程中，未观察到辐照样品的单事件闭锁现象。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Radiation Assessment of a 56-Gb/s Electro-Absorption Modulator Driver for Optical Intrasatellite Links

This article presents a radiation-hardened-by-process 56-Gb/s electro-absorption modulator (EAM) driver designed in a 130-nm silicon germanium (SiGe) bipolar complementary metal oxide semiconductor (BiCMOS) technology for application in optical intrasatellite links. Details of the driver architecture are provided, along with the electrical and optical measurement setups used to evaluate its performance. To assess the vulnerability of the driver against radiation exposure in the space environment, samples were irradiated with X-rays up to a total accumulated dose of 1.2 Mrad(Si), simulating the effects of total ionizing dose (TID) in orbit. Furthermore, heavy-ion experiments corroborated the driver’s resilience to single-event transients (SETs) across a range of linear energy transfers (LETs) from 20 to 65.2 MeV cm2/mg, with a particle fluence of

$1.2\times 10^{7}$

cm−2. No single-event latchup (SEL) was observed in the irradiated samples during the heavy-ion exposure.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Transactions on Nuclear Science 工程技术-工程：电子与电气

CiteScore

3.70

自引率

27.80%

发文量

314

审稿时长

6.2 months

期刊介绍： The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years. The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.