DC and RF performance analysis of scaled AlInN/GaN HEMTs with single and double-gate structures

This manuscript focuses on the behaviour of AlInN/GaN high electron mobility transistors (HEMTs) by scaling down the device geometry, explicitly concentrating on gate length and barrier thickness with different operating temperatures. Comprehensive analytical simulations were performed to analyze the DC and RF performance of proposed HEMTs by calculating parameters such as I_on/I_off ratio, intrinsic gain, DIBL, and cut-off frequency using Silvaco's Victory TCAD simulator. To improve RF performance a double-gate (DG) structure is analyzed and compared with single gate structure. These results reveal a trade-off between intrinsic gain and cut-off frequency with the DG design achieving an increase in cut-off frequency though a reduction in intrinsic gain. This analysis shows the importance of accurate optimization of device structure to achieve superior device RF performance.