衬底取向对HVPE生长同外延β-Ga2O3薄膜的影响

IF 3 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
P.N. Butenko, A.I. Pechnikov, M.E. Boiko, L.I. Guzilova, V.M. Krymov, S.V. Shapenkov, M.D. Sharkov, I.P. Soshnikov, V.I. Nikolaev
{"title":"衬底取向对HVPE生长同外延β-Ga2O3薄膜的影响","authors":"P.N. Butenko,&nbsp;A.I. Pechnikov,&nbsp;M.E. Boiko,&nbsp;L.I. Guzilova,&nbsp;V.M. Krymov,&nbsp;S.V. Shapenkov,&nbsp;M.D. Sharkov,&nbsp;I.P. Soshnikov,&nbsp;V.I. Nikolaev","doi":"10.1016/j.mtla.2025.102415","DOIUrl":null,"url":null,"abstract":"<div><div>Gallium oxide is a promising ultra-wide bandgap (UWBG) transparent oxide semiconductor. It is currently being intensively tested for power electronics devices. Epitaxial growth is mainly utilized for their fabrication. The substrate orientation plays a key role in this process, since the monoclinic low symmetrical gallium oxide phase is highly anisotropic in its physical properties. We report homoepitaxial β-Ga<sub>2</sub>O<sub>3</sub> layers, that were grown by HVPE on the native substrates of the (100) and the (<span><math><mover><mn>2</mn><mo>¯</mo></mover></math></span>01) orientations for the first time. The structural properties of these films are compared with the ones grown on conventional (010) oriented substrates. Acquired layers are single-phase and monocrystalline, but they differ significantly in crystal perfection, homogeneity of chemical composition and surface roughness. The highest growth rate has been achieved on the (<span><math><mover><mn>2</mn><mo>¯</mo></mover></math></span>01) plane, which demonstrates the potential of this orientation in device structures.</div></div>","PeriodicalId":47623,"journal":{"name":"Materialia","volume":"40 ","pages":"Article 102415"},"PeriodicalIF":3.0000,"publicationDate":"2025-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of substrate orientation on homoepitaxial β-Ga2O3 films grown by HVPE\",\"authors\":\"P.N. Butenko,&nbsp;A.I. Pechnikov,&nbsp;M.E. Boiko,&nbsp;L.I. Guzilova,&nbsp;V.M. Krymov,&nbsp;S.V. Shapenkov,&nbsp;M.D. Sharkov,&nbsp;I.P. Soshnikov,&nbsp;V.I. Nikolaev\",\"doi\":\"10.1016/j.mtla.2025.102415\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Gallium oxide is a promising ultra-wide bandgap (UWBG) transparent oxide semiconductor. It is currently being intensively tested for power electronics devices. Epitaxial growth is mainly utilized for their fabrication. The substrate orientation plays a key role in this process, since the monoclinic low symmetrical gallium oxide phase is highly anisotropic in its physical properties. We report homoepitaxial β-Ga<sub>2</sub>O<sub>3</sub> layers, that were grown by HVPE on the native substrates of the (100) and the (<span><math><mover><mn>2</mn><mo>¯</mo></mover></math></span>01) orientations for the first time. The structural properties of these films are compared with the ones grown on conventional (010) oriented substrates. Acquired layers are single-phase and monocrystalline, but they differ significantly in crystal perfection, homogeneity of chemical composition and surface roughness. The highest growth rate has been achieved on the (<span><math><mover><mn>2</mn><mo>¯</mo></mover></math></span>01) plane, which demonstrates the potential of this orientation in device structures.</div></div>\",\"PeriodicalId\":47623,\"journal\":{\"name\":\"Materialia\",\"volume\":\"40 \",\"pages\":\"Article 102415\"},\"PeriodicalIF\":3.0000,\"publicationDate\":\"2025-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materialia\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2589152925000821\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materialia","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2589152925000821","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

氧化镓是一种很有前途的超宽带隙透明氧化物半导体。目前正在对电力电子设备进行密集测试。外延生长主要用于它们的制备。由于单斜低对称氧化镓相的物理性质具有高度的各向异性,因此衬底取向在这一过程中起着关键作用。我们首次报道了用HVPE在(100)和(2¯01)取向的天然衬底上生长的同外延β-Ga2O3层。将这些薄膜的结构性能与在传统(010)取向衬底上生长的薄膜进行了比较。所得层为单相和单晶,但在晶体完美性、化学成分均匀性和表面粗糙度方面存在显著差异。在(2¯01)平面上实现了最高的生长速率,这表明了这种取向在器件结构中的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Effect of substrate orientation on homoepitaxial β-Ga2O3 films grown by HVPE

Effect of substrate orientation on homoepitaxial β-Ga2O3 films grown by HVPE
Gallium oxide is a promising ultra-wide bandgap (UWBG) transparent oxide semiconductor. It is currently being intensively tested for power electronics devices. Epitaxial growth is mainly utilized for their fabrication. The substrate orientation plays a key role in this process, since the monoclinic low symmetrical gallium oxide phase is highly anisotropic in its physical properties. We report homoepitaxial β-Ga2O3 layers, that were grown by HVPE on the native substrates of the (100) and the (2¯01) orientations for the first time. The structural properties of these films are compared with the ones grown on conventional (010) oriented substrates. Acquired layers are single-phase and monocrystalline, but they differ significantly in crystal perfection, homogeneity of chemical composition and surface roughness. The highest growth rate has been achieved on the (2¯01) plane, which demonstrates the potential of this orientation in device structures.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Materialia
Materialia MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
6.40
自引率
2.90%
发文量
345
审稿时长
36 days
期刊介绍: Materialia is a multidisciplinary journal of materials science and engineering that publishes original peer-reviewed research articles. Articles in Materialia advance the understanding of the relationship between processing, structure, property, and function of materials. Materialia publishes full-length research articles, review articles, and letters (short communications). In addition to receiving direct submissions, Materialia also accepts transfers from Acta Materialia, Inc. partner journals. Materialia offers authors the choice to publish on an open access model (with author fee), or on a subscription model (with no author fee).
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信