{"title":"衬底取向对HVPE生长同外延β-Ga2O3薄膜的影响","authors":"P.N. Butenko, A.I. Pechnikov, M.E. Boiko, L.I. Guzilova, V.M. Krymov, S.V. Shapenkov, M.D. Sharkov, I.P. Soshnikov, V.I. Nikolaev","doi":"10.1016/j.mtla.2025.102415","DOIUrl":null,"url":null,"abstract":"<div><div>Gallium oxide is a promising ultra-wide bandgap (UWBG) transparent oxide semiconductor. It is currently being intensively tested for power electronics devices. Epitaxial growth is mainly utilized for their fabrication. The substrate orientation plays a key role in this process, since the monoclinic low symmetrical gallium oxide phase is highly anisotropic in its physical properties. We report homoepitaxial β-Ga<sub>2</sub>O<sub>3</sub> layers, that were grown by HVPE on the native substrates of the (100) and the (<span><math><mover><mn>2</mn><mo>¯</mo></mover></math></span>01) orientations for the first time. The structural properties of these films are compared with the ones grown on conventional (010) oriented substrates. Acquired layers are single-phase and monocrystalline, but they differ significantly in crystal perfection, homogeneity of chemical composition and surface roughness. The highest growth rate has been achieved on the (<span><math><mover><mn>2</mn><mo>¯</mo></mover></math></span>01) plane, which demonstrates the potential of this orientation in device structures.</div></div>","PeriodicalId":47623,"journal":{"name":"Materialia","volume":"40 ","pages":"Article 102415"},"PeriodicalIF":3.0000,"publicationDate":"2025-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of substrate orientation on homoepitaxial β-Ga2O3 films grown by HVPE\",\"authors\":\"P.N. Butenko, A.I. Pechnikov, M.E. Boiko, L.I. Guzilova, V.M. Krymov, S.V. Shapenkov, M.D. Sharkov, I.P. Soshnikov, V.I. Nikolaev\",\"doi\":\"10.1016/j.mtla.2025.102415\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Gallium oxide is a promising ultra-wide bandgap (UWBG) transparent oxide semiconductor. It is currently being intensively tested for power electronics devices. Epitaxial growth is mainly utilized for their fabrication. The substrate orientation plays a key role in this process, since the monoclinic low symmetrical gallium oxide phase is highly anisotropic in its physical properties. We report homoepitaxial β-Ga<sub>2</sub>O<sub>3</sub> layers, that were grown by HVPE on the native substrates of the (100) and the (<span><math><mover><mn>2</mn><mo>¯</mo></mover></math></span>01) orientations for the first time. The structural properties of these films are compared with the ones grown on conventional (010) oriented substrates. Acquired layers are single-phase and monocrystalline, but they differ significantly in crystal perfection, homogeneity of chemical composition and surface roughness. The highest growth rate has been achieved on the (<span><math><mover><mn>2</mn><mo>¯</mo></mover></math></span>01) plane, which demonstrates the potential of this orientation in device structures.</div></div>\",\"PeriodicalId\":47623,\"journal\":{\"name\":\"Materialia\",\"volume\":\"40 \",\"pages\":\"Article 102415\"},\"PeriodicalIF\":3.0000,\"publicationDate\":\"2025-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materialia\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2589152925000821\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materialia","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2589152925000821","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Effect of substrate orientation on homoepitaxial β-Ga2O3 films grown by HVPE
Gallium oxide is a promising ultra-wide bandgap (UWBG) transparent oxide semiconductor. It is currently being intensively tested for power electronics devices. Epitaxial growth is mainly utilized for their fabrication. The substrate orientation plays a key role in this process, since the monoclinic low symmetrical gallium oxide phase is highly anisotropic in its physical properties. We report homoepitaxial β-Ga2O3 layers, that were grown by HVPE on the native substrates of the (100) and the (01) orientations for the first time. The structural properties of these films are compared with the ones grown on conventional (010) oriented substrates. Acquired layers are single-phase and monocrystalline, but they differ significantly in crystal perfection, homogeneity of chemical composition and surface roughness. The highest growth rate has been achieved on the (01) plane, which demonstrates the potential of this orientation in device structures.
期刊介绍:
Materialia is a multidisciplinary journal of materials science and engineering that publishes original peer-reviewed research articles. Articles in Materialia advance the understanding of the relationship between processing, structure, property, and function of materials.
Materialia publishes full-length research articles, review articles, and letters (short communications). In addition to receiving direct submissions, Materialia also accepts transfers from Acta Materialia, Inc. partner journals. Materialia offers authors the choice to publish on an open access model (with author fee), or on a subscription model (with no author fee).