Taissia Rudnikov-Keinan, Shir Gefen, Alexander Rashkovskiy, Mariela J. Pavan, Nitzan Maman, Vladimir Ezersky, Shachar Mishraki and Yuval Golan*,
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2D Confinement-Driven Epitaxy of Solution-Deposited Cu2O on GaAs
Epitaxial cuprous oxide (Cu2O) thin films were deposited from aqueous alkaline solutions within confined microsquares in micropatterned GaAs. Raman spectroscopy and transmission electron microscopy analysis revealed the presence of single-phase Cu2O, with no detectable CuO impurity. In contrast to (110) textured polycrystalline Cu2O films obtained on unpatterned substrates, monocrystalline Cu2O (100) films were obtained within the GaAs microsquares. It was found that a 45° in-plane rotation of the prefabricated microsquares with respect to the [01̅1] GaAs axis promotes Cu2O (100) monocrystalline growth by minimizing lattice mismatch and providing optimal substrate/film orientation for growth. The thickness of the Cu2O film and the growth rate within the confined squares emerge as dominant parameters affecting crystal quality and controlling photoluminescence emission, as evidenced by formation of point defects, primarily oxygen vacancies.
期刊介绍：
ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric.
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