W/CoFeB异质结构中Nb - 4d过渡金属诱导磁各向异性演化的微观起源

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Neha Gupta, Sudip Nath, Gnana Spoorthy Komma, Nageshwara Rao Pothana, Deepak Garg, Shreyashkar Dev Singh, Varimalla Raghavendra Reddy, Dileep Kumar, Sanjay Kumar Rai and Pooja Gupta*, 
{"title":"W/CoFeB异质结构中Nb - 4d过渡金属诱导磁各向异性演化的微观起源","authors":"Neha Gupta,&nbsp;Sudip Nath,&nbsp;Gnana Spoorthy Komma,&nbsp;Nageshwara Rao Pothana,&nbsp;Deepak Garg,&nbsp;Shreyashkar Dev Singh,&nbsp;Varimalla Raghavendra Reddy,&nbsp;Dileep Kumar,&nbsp;Sanjay Kumar Rai and Pooja Gupta*,&nbsp;","doi":"10.1021/acsaelm.5c0049410.1021/acsaelm.5c00494","DOIUrl":null,"url":null,"abstract":"<p >The tuning of magnetic anisotropy in magnetic thin films is the key aspect in the condensed matter physics research field to develop materials useful for practical applications. In the present work, we have investigated the microscopic origin of magnetic anisotropy evolution in W-buffered (CoFeB)<sub>100–<i>x</i></sub>Nb<sub><i>x</i></sub> (<i>x</i> = 0, 3, 5, 10) alloy films induced by a 4d transition metal (Nb). All films were prepared at an elevated growth temperature of 500 °C using the magnetron sputtering technique. Nb-free films (<i>x</i> = 0) exhibit a polycrystalline structure, magnetically isotropic nature, and soft magnetism (coercive field ∼30 Oe). Systematic addition of Nb (from <i>x</i> = 0 to 10) leads to microstructural transformation from polycrystalline to nearly amorphous structure, with a reduction in grain size (from ∼9 to ∼3 nm), surface smoothening, enhanced soft magnetism (coercive field decreases from ∼30 to ∼6 Oe), and more importantly, the emergence of magnetic anisotropy in CoFeB films. In the anisotropic state, angular variation of coercivity reveals that the magnetization reversal process is consistent with a two-phase model. Remarkably, the orbital and spin magnetic moments of Fe and Co atoms were quantified using an element-specific technique of X-ray magnetic circular dichroism. The correlation between the orbital-to-spin moment ratio and observed magnetic anisotropy provides insight into the role of Nb 4d transition metal in inducing the magnetic anisotropy in amorphous/polycrystalline CoFeB thin films, which is vital for advancing their application in spintronics devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 8","pages":"3599–3609 3599–3609"},"PeriodicalIF":4.3000,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Unraveling Microscopic Origin of Nb 4d Transition-Metal-Induced Magnetic Anisotropy Evolution in W/CoFeB Heterostructures\",\"authors\":\"Neha Gupta,&nbsp;Sudip Nath,&nbsp;Gnana Spoorthy Komma,&nbsp;Nageshwara Rao Pothana,&nbsp;Deepak Garg,&nbsp;Shreyashkar Dev Singh,&nbsp;Varimalla Raghavendra Reddy,&nbsp;Dileep Kumar,&nbsp;Sanjay Kumar Rai and Pooja Gupta*,&nbsp;\",\"doi\":\"10.1021/acsaelm.5c0049410.1021/acsaelm.5c00494\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >The tuning of magnetic anisotropy in magnetic thin films is the key aspect in the condensed matter physics research field to develop materials useful for practical applications. In the present work, we have investigated the microscopic origin of magnetic anisotropy evolution in W-buffered (CoFeB)<sub>100–<i>x</i></sub>Nb<sub><i>x</i></sub> (<i>x</i> = 0, 3, 5, 10) alloy films induced by a 4d transition metal (Nb). All films were prepared at an elevated growth temperature of 500 °C using the magnetron sputtering technique. Nb-free films (<i>x</i> = 0) exhibit a polycrystalline structure, magnetically isotropic nature, and soft magnetism (coercive field ∼30 Oe). Systematic addition of Nb (from <i>x</i> = 0 to 10) leads to microstructural transformation from polycrystalline to nearly amorphous structure, with a reduction in grain size (from ∼9 to ∼3 nm), surface smoothening, enhanced soft magnetism (coercive field decreases from ∼30 to ∼6 Oe), and more importantly, the emergence of magnetic anisotropy in CoFeB films. In the anisotropic state, angular variation of coercivity reveals that the magnetization reversal process is consistent with a two-phase model. Remarkably, the orbital and spin magnetic moments of Fe and Co atoms were quantified using an element-specific technique of X-ray magnetic circular dichroism. The correlation between the orbital-to-spin moment ratio and observed magnetic anisotropy provides insight into the role of Nb 4d transition metal in inducing the magnetic anisotropy in amorphous/polycrystalline CoFeB thin films, which is vital for advancing their application in spintronics devices.</p>\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":\"7 8\",\"pages\":\"3599–3609 3599–3609\"},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2025-04-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsaelm.5c00494\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.5c00494","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

磁性薄膜中磁性各向异性的调谐是凝聚态物理研究领域开发实用材料的关键。在本工作中,我们研究了由4d过渡金属(Nb)诱导的w缓冲(CoFeB) 100-xNbx (x = 0,3,5,10)合金薄膜磁各向异性演化的微观起源。所有薄膜均采用磁控溅射技术在500°C的高生长温度下制备。无铌薄膜(x = 0)表现出多晶结构、磁各向同性和软磁(矫顽力场~ 30 Oe)。系统添加Nb(从x = 0到10)导致微观结构从多晶转变为近非晶结构,晶粒尺寸减小(从~ 9 nm到~ 3 nm),表面光滑,软磁增强(矫顽力从~ 30 Oe减小到~ 6 Oe),更重要的是,CoFeB薄膜中磁各向异性的出现。在各向异性状态下,矫顽力的角变化表明磁化反转过程符合两相模型。值得注意的是,Fe和Co原子的轨道和自旋磁矩是用x射线磁圆二色性的元素特异性技术量化的。轨道自旋矩比与观察到的磁各向异性之间的关系,为深入了解铌四维过渡金属在诱导非晶/多晶CoFeB薄膜磁各向异性中的作用提供了线索,这对于推进其在自旋电子器件中的应用至关重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Unraveling Microscopic Origin of Nb 4d Transition-Metal-Induced Magnetic Anisotropy Evolution in W/CoFeB Heterostructures

Unraveling Microscopic Origin of Nb 4d Transition-Metal-Induced Magnetic Anisotropy Evolution in W/CoFeB Heterostructures

The tuning of magnetic anisotropy in magnetic thin films is the key aspect in the condensed matter physics research field to develop materials useful for practical applications. In the present work, we have investigated the microscopic origin of magnetic anisotropy evolution in W-buffered (CoFeB)100–xNbx (x = 0, 3, 5, 10) alloy films induced by a 4d transition metal (Nb). All films were prepared at an elevated growth temperature of 500 °C using the magnetron sputtering technique. Nb-free films (x = 0) exhibit a polycrystalline structure, magnetically isotropic nature, and soft magnetism (coercive field ∼30 Oe). Systematic addition of Nb (from x = 0 to 10) leads to microstructural transformation from polycrystalline to nearly amorphous structure, with a reduction in grain size (from ∼9 to ∼3 nm), surface smoothening, enhanced soft magnetism (coercive field decreases from ∼30 to ∼6 Oe), and more importantly, the emergence of magnetic anisotropy in CoFeB films. In the anisotropic state, angular variation of coercivity reveals that the magnetization reversal process is consistent with a two-phase model. Remarkably, the orbital and spin magnetic moments of Fe and Co atoms were quantified using an element-specific technique of X-ray magnetic circular dichroism. The correlation between the orbital-to-spin moment ratio and observed magnetic anisotropy provides insight into the role of Nb 4d transition metal in inducing the magnetic anisotropy in amorphous/polycrystalline CoFeB thin films, which is vital for advancing their application in spintronics devices.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信