Scalable Integrated Sensing and Computing Memory Devices for Logic Circuit Realization: V2O5/WO3 Heterostructures

This paper presents integrated sensing and computing memory (ISCM) devices based on V₂O₅/WO₃ heterostructures using wafer-scalable semiconductor microfabrication processes. The impact of the V₂O₅/WO₃ heterostructure-based ISCM devices was tested and compared with the V₂O₅- and WO₃-based ISCM structures. The heterostructured devices have broadband sensing capability with improved performance metrics as compared to the single-material-based ISCM devices. The heterostructured device has shown responsivity (1.5 A/W) and detectivity (1.2 × 10¹¹ Jones) at 950 nm. All fabricated devices were stimulated using AC and DC stimuli under various illumination conditions. The heterostructured ISCM device offers a high current switching ratio (30.6), and this value is 2 times and 17 times higher than WO₃ and V₂O₅, respectively. In addition, all devices have ultrafast resistive switching capability and long-term stability of >10² cycles. The heterostructured device has shown the set and reset times of 88.6/35.7 μs, respectively, at 950 nm. In addition, the AND gate logic circuit is realized using electrical and optical stimuli. These test results have proven that the fabricated devices can be deployed as sensing/storage devices for future broadband sensing and memory technology.