超声尖端辅助单层二硫化钼的压电转导

IF 26.8 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Barnik Pal, Rahul Paramanik, Bipul Karmakar, Tanima Kundu, Mainak Palit, Bikash Das, Subhadeep Datta
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引用次数: 0

摘要

超声波与压电材料的相互作用为增强范德华异质结构中的电和力学耦合提供了定量途径。本文提出了导线键合尖端辅助超声(≈100 kHz)作为在Si/SiO2衬底上单层MoS2中实现压电转导的有效方法。瞬态电流测量显示,在冲击持续时间为10-100 ms的情况下,单层二硫化钼具有独特的峰基比(Ipeak/ ibbase≈12),可重复出现尖峰。静电栅电压(Vg)和超声功率(WP)可调压电在ON状态(Vg大于或等于0)下的灵敏度比OFF状态高3-5倍。声波在源极-漏极的多次反射,随着反射系数的增加,增强了峰值电流的线宽,这一点在亚微米几何形状的表面声波(SAW)传播的微声模拟中得到了验证。超声激发下的局部应变和焦耳加热可以产生≈20 K的温升,这降低了活化能垒,潜在地提高了温度敏感化学过程(如过氧化氢分解)的反应速率。这种无热损伤的方法与硅基制造相结合,为基于FET的压电换能器的片上催化和能量收集建立了一个强大的平台。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Ultrasound Tip-Assisted Piezotronic Transduction in Monolayer MoS2

Ultrasound Tip-Assisted Piezotronic Transduction in Monolayer MoS2

Ultrasound Tip-Assisted Piezotronic Transduction in Monolayer MoS2

Ultrasound Tip-Assisted Piezotronic Transduction in Monolayer MoS2

Ultrasound Tip-Assisted Piezotronic Transduction in Monolayer MoS2

Ultrasound Tip-Assisted Piezotronic Transduction in Monolayer MoS2

The interaction of ultrasonic waves with piezoelectric materials provides a quantitative route to enhance electrical and mechanical coupling in van der Waals (vdW) heterostructures. Here, wire-bonding tip-assisted ultrasound (≈100 kHz) is presented as an effective approach to achieve piezoelectric transduction in monolayer MoS2 on Si/SiO2 substrates. Transient current measurements show reproducible sharp peaks with a peak-to-base ratio (Ipeak/Ibase ≈ 12) unique to monolayer MoS2, under an impact duration of 10–100 ms. Electrostatic gate voltage (Vg) and ultrasound power (WP) tunable piezocurrent exhibit 3–5 times higher sensitivity in the ON-state (Vg ⩾ 0) compared to the OFF-state. Multiple reflections of acoustic waves at source-drain electrodes, with an increment in reflection coefficients, enhance the linewidth of peak currents, validated by microacoustic simulations of surface acoustic wave (SAW) propagation in submicron geometries. The localized strain and Joule heating under ultrasonic excitation may generate a temperature rise of ≈20 K, which reduces activation energy barriers, potentially enhancing reaction rates in temperature-sensitive chemical processes, such as hydrogen peroxide decomposition. This thermal-damage-free method integrates with silicon-based fabrication, establishing a robust platform for on-chip catalysis and energy harvesting in FET-based piezotransducers.

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来源期刊
Advanced Materials
Advanced Materials 工程技术-材料科学:综合
CiteScore
43.00
自引率
4.10%
发文量
2182
审稿时长
2 months
期刊介绍: Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.
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