{"title":"二维半导体异质结的门可调谐热电子萃取","authors":"Chenran Xu, Chen Xu, Jichen Zhou, Zhexu Shan, Wenjian Su, Wenbing Li, Xingqi Xu, Kenji Watanabe, Takashi Taniguchi, Shiyao Zhu, Dawei Wang, Yanhao Tang","doi":"10.1021/acs.nanolett.4c06416","DOIUrl":null,"url":null,"abstract":"Hot carrier solar cells (HCSCs), harvesting the excess energy of hot carriers generated by above-band gap photoexcitation, are crucial for pushing the solar cell efficiency beyond the Shockley–Queisser limit, which is challenging to realize mainly due to fast hot-carrier cooling. By performing transient reflectance spectroscopy in a MoSe<sub>2</sub>/hBN/WS<sub>2</sub> junction, we demonstrate the gate-tunable harvest of hot electrons from MoSe<sub>2</sub> to WS<sub>2</sub>. By spectrally distinguishing hot-electron extraction from lattice temperature increase, we find that electrostatically doped electrons in MoSe<sub>2</sub> can boost hot-electron extraction density (<i>n</i><sub><i>ET</i></sub>) by a factor up to several tens. Such enhancement arises from the interaction between hot excitons and doped electrons, which converts the excess energy of hot excitons to excitations of the Fermi sea and hence generates hot electrons. Moreover, <i>n</i><sub><i>ET</i></sub> can be further enhanced by reducing the conduction band offset with an external electric field. Our results provide in-depth insights into the design of HCSCs with electrostatic strategies.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"11 1","pages":""},"PeriodicalIF":9.6000,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Gate-Tunable Hot Electron Extraction in a Two-Dimensional Semiconductor Heterojunction\",\"authors\":\"Chenran Xu, Chen Xu, Jichen Zhou, Zhexu Shan, Wenjian Su, Wenbing Li, Xingqi Xu, Kenji Watanabe, Takashi Taniguchi, Shiyao Zhu, Dawei Wang, Yanhao Tang\",\"doi\":\"10.1021/acs.nanolett.4c06416\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hot carrier solar cells (HCSCs), harvesting the excess energy of hot carriers generated by above-band gap photoexcitation, are crucial for pushing the solar cell efficiency beyond the Shockley–Queisser limit, which is challenging to realize mainly due to fast hot-carrier cooling. By performing transient reflectance spectroscopy in a MoSe<sub>2</sub>/hBN/WS<sub>2</sub> junction, we demonstrate the gate-tunable harvest of hot electrons from MoSe<sub>2</sub> to WS<sub>2</sub>. By spectrally distinguishing hot-electron extraction from lattice temperature increase, we find that electrostatically doped electrons in MoSe<sub>2</sub> can boost hot-electron extraction density (<i>n</i><sub><i>ET</i></sub>) by a factor up to several tens. Such enhancement arises from the interaction between hot excitons and doped electrons, which converts the excess energy of hot excitons to excitations of the Fermi sea and hence generates hot electrons. Moreover, <i>n</i><sub><i>ET</i></sub> can be further enhanced by reducing the conduction band offset with an external electric field. Our results provide in-depth insights into the design of HCSCs with electrostatic strategies.\",\"PeriodicalId\":53,\"journal\":{\"name\":\"Nano Letters\",\"volume\":\"11 1\",\"pages\":\"\"},\"PeriodicalIF\":9.6000,\"publicationDate\":\"2025-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nano Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1021/acs.nanolett.4c06416\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Letters","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acs.nanolett.4c06416","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Gate-Tunable Hot Electron Extraction in a Two-Dimensional Semiconductor Heterojunction
Hot carrier solar cells (HCSCs), harvesting the excess energy of hot carriers generated by above-band gap photoexcitation, are crucial for pushing the solar cell efficiency beyond the Shockley–Queisser limit, which is challenging to realize mainly due to fast hot-carrier cooling. By performing transient reflectance spectroscopy in a MoSe2/hBN/WS2 junction, we demonstrate the gate-tunable harvest of hot electrons from MoSe2 to WS2. By spectrally distinguishing hot-electron extraction from lattice temperature increase, we find that electrostatically doped electrons in MoSe2 can boost hot-electron extraction density (nET) by a factor up to several tens. Such enhancement arises from the interaction between hot excitons and doped electrons, which converts the excess energy of hot excitons to excitations of the Fermi sea and hence generates hot electrons. Moreover, nET can be further enhanced by reducing the conduction band offset with an external electric field. Our results provide in-depth insights into the design of HCSCs with electrostatic strategies.
期刊介绍:
Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including:
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