{"title":"硼罗芬基超灵敏和宽带光电探测器","authors":"Yaser Abdi, Alireza Eskandari, Zahra Alavi, Anousha Khamsavi, Mahsa Etminan, Mobina Zahedi, Masoud Taleb, Nahid Talebi","doi":"10.1002/admi.202400894","DOIUrl":null,"url":null,"abstract":"<p>Photodetectors based on vertical junctions between 2D materials and silicon offer enhanced sensitivity, reduced size, and better integrability with other systems. In these detectors, 2D materials are typically grown on metallic crystalline substrates and then transferred onto silicon to form a van der Waals junction between the 2D and silicon. In this work, χ<sub>3</sub>-phase borophene is directly grown on single-crystal silicon wafers, resulting in excellent Schottky junctions between borophene and silicon. This approach eliminates impurities often introduced during the transfer process, which is commonly performed using polymethyl methacrylate, ensuring a smooth fabrication process and a reliable electrical junction. Optoelectronic measurements of the borophene-based detector on n-type silicon demonstrate high sensitivity, reaching several amps per watt across a wide wavelength range from ultraviolet to infrared. This sensitivity is approximately ten times higher than that of detectors fabricated by transferring 2D materials onto silicon. Additionally, the response times of the fabricated detector are measured at 35 µs for the rise time and 225 µs for the fall time. These exceptional results are attributed to the superior junction formed through direct borophene growth on silicon, paving the way for advanced photodetectors with enhanced light–matter interaction efficiency in integrated silicon-based circuits and technologies.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 8","pages":""},"PeriodicalIF":4.3000,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202400894","citationCount":"0","resultStr":"{\"title\":\"Borophene-Based Ultrasensitive and Broadband Photodetectors\",\"authors\":\"Yaser Abdi, Alireza Eskandari, Zahra Alavi, Anousha Khamsavi, Mahsa Etminan, Mobina Zahedi, Masoud Taleb, Nahid Talebi\",\"doi\":\"10.1002/admi.202400894\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Photodetectors based on vertical junctions between 2D materials and silicon offer enhanced sensitivity, reduced size, and better integrability with other systems. In these detectors, 2D materials are typically grown on metallic crystalline substrates and then transferred onto silicon to form a van der Waals junction between the 2D and silicon. In this work, χ<sub>3</sub>-phase borophene is directly grown on single-crystal silicon wafers, resulting in excellent Schottky junctions between borophene and silicon. This approach eliminates impurities often introduced during the transfer process, which is commonly performed using polymethyl methacrylate, ensuring a smooth fabrication process and a reliable electrical junction. Optoelectronic measurements of the borophene-based detector on n-type silicon demonstrate high sensitivity, reaching several amps per watt across a wide wavelength range from ultraviolet to infrared. This sensitivity is approximately ten times higher than that of detectors fabricated by transferring 2D materials onto silicon. Additionally, the response times of the fabricated detector are measured at 35 µs for the rise time and 225 µs for the fall time. These exceptional results are attributed to the superior junction formed through direct borophene growth on silicon, paving the way for advanced photodetectors with enhanced light–matter interaction efficiency in integrated silicon-based circuits and technologies.</p>\",\"PeriodicalId\":115,\"journal\":{\"name\":\"Advanced Materials Interfaces\",\"volume\":\"12 8\",\"pages\":\"\"},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2024-12-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202400894\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Materials Interfaces\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/admi.202400894\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials Interfaces","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/admi.202400894","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
基于二维材料和硅之间垂直结的光探测器具有更高的灵敏度、更小的尺寸以及与其他系统更好的集成性。在这些探测器中,二维材料通常生长在金属晶体衬底上,然后转移到硅上,在二维材料和硅之间形成范德华结。在这项工作中,χ3 相硼吩是直接在单晶硅片上生长的,从而在硼吩和硅之间形成了极好的肖特基结。这种方法消除了通常使用聚甲基丙烯酸甲酯进行的转移过程中引入的杂质,确保了顺利的制造过程和可靠的电结。在 n 型硅上对基于硼吩的探测器进行的光电测量显示出极高的灵敏度,在从紫外线到红外线的宽波长范围内达到了每瓦几安培。这一灵敏度比通过在硅上转移二维材料制作的探测器高出约十倍。此外,所制造探测器的上升时间和下降时间分别为 35 微秒和 225 微秒。这些优异的结果归功于通过在硅上直接生长硼吩而形成的卓越结,为在硅基集成电路和技术中使用具有更高光-物质相互作用效率的先进光电探测器铺平了道路。
Borophene-Based Ultrasensitive and Broadband Photodetectors
Photodetectors based on vertical junctions between 2D materials and silicon offer enhanced sensitivity, reduced size, and better integrability with other systems. In these detectors, 2D materials are typically grown on metallic crystalline substrates and then transferred onto silicon to form a van der Waals junction between the 2D and silicon. In this work, χ3-phase borophene is directly grown on single-crystal silicon wafers, resulting in excellent Schottky junctions between borophene and silicon. This approach eliminates impurities often introduced during the transfer process, which is commonly performed using polymethyl methacrylate, ensuring a smooth fabrication process and a reliable electrical junction. Optoelectronic measurements of the borophene-based detector on n-type silicon demonstrate high sensitivity, reaching several amps per watt across a wide wavelength range from ultraviolet to infrared. This sensitivity is approximately ten times higher than that of detectors fabricated by transferring 2D materials onto silicon. Additionally, the response times of the fabricated detector are measured at 35 µs for the rise time and 225 µs for the fall time. These exceptional results are attributed to the superior junction formed through direct borophene growth on silicon, paving the way for advanced photodetectors with enhanced light–matter interaction efficiency in integrated silicon-based circuits and technologies.
期刊介绍:
Advanced Materials Interfaces publishes top-level research on interface technologies and effects. Considering any interface formed between solids, liquids, and gases, the journal ensures an interdisciplinary blend of physics, chemistry, materials science, and life sciences. Advanced Materials Interfaces was launched in 2014 and received an Impact Factor of 4.834 in 2018.
The scope of Advanced Materials Interfaces is dedicated to interfaces and surfaces that play an essential role in virtually all materials and devices. Physics, chemistry, materials science and life sciences blend to encourage new, cross-pollinating ideas, which will drive forward our understanding of the processes at the interface.
Advanced Materials Interfaces covers all topics in interface-related research:
Oil / water separation,
Applications of nanostructured materials,
2D materials and heterostructures,
Surfaces and interfaces in organic electronic devices,
Catalysis and membranes,
Self-assembly and nanopatterned surfaces,
Composite and coating materials,
Biointerfaces for technical and medical applications.
Advanced Materials Interfaces provides a forum for topics on surface and interface science with a wide choice of formats: Reviews, Full Papers, and Communications, as well as Progress Reports and Research News.