Tara Afra, Walter Fuscaldo, Dimitrios C. Zografopoulos, Teresa Natale, Francesco Dell’Olio
{"title":"基于二氧化钒超表面的可调谐宽带近乎完美的太赫兹波吸收器","authors":"Tara Afra, Walter Fuscaldo, Dimitrios C. Zografopoulos, Teresa Natale, Francesco Dell’Olio","doi":"10.1007/s11082-025-08186-0","DOIUrl":null,"url":null,"abstract":"<div><p>Vanadium dioxide (VO<sub>2</sub>) is a remarkable phase-change material whose temperature-driven insulator-to-metal transition unlocks powerful tunability in the THz regime. Here, we present a VO<sub>2</sub>-based metasurface that not only achieves over 90% absorption efficiency across a broad 1.27–2.64 THz range when in its metallic phase, but also transitions into a nearly perfect reflector (0.1–4 THz) in its dielectric phase. This striking dual functionality leverages the unique conductivity variation of VO<sub>2</sub> with temperature and is realized through a metasurface on a thin SiO<sub>2</sub> spacer backed by a gold layer. Notably, our design maintains insensitivity to both polarizations and incidence angle—crucial characteristics for practical THz applications—while offering a robust, wideband response. Through systematic analysis, we elucidate the physical mechanisms governing the high absorption and reflection, and demonstrate how key geometric parameters influence the device performance. By combining wideband tunability, angular and polarization invariance, and design simplicity, this metasurface holds substantial promise as a versatile component for next-generation THz technologies.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2025-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-025-08186-0.pdf","citationCount":"0","resultStr":"{\"title\":\"Tunable wide band near-perfect absorber for terahertz waves based on a vanadium dioxide metasurface\",\"authors\":\"Tara Afra, Walter Fuscaldo, Dimitrios C. Zografopoulos, Teresa Natale, Francesco Dell’Olio\",\"doi\":\"10.1007/s11082-025-08186-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Vanadium dioxide (VO<sub>2</sub>) is a remarkable phase-change material whose temperature-driven insulator-to-metal transition unlocks powerful tunability in the THz regime. Here, we present a VO<sub>2</sub>-based metasurface that not only achieves over 90% absorption efficiency across a broad 1.27–2.64 THz range when in its metallic phase, but also transitions into a nearly perfect reflector (0.1–4 THz) in its dielectric phase. This striking dual functionality leverages the unique conductivity variation of VO<sub>2</sub> with temperature and is realized through a metasurface on a thin SiO<sub>2</sub> spacer backed by a gold layer. Notably, our design maintains insensitivity to both polarizations and incidence angle—crucial characteristics for practical THz applications—while offering a robust, wideband response. Through systematic analysis, we elucidate the physical mechanisms governing the high absorption and reflection, and demonstrate how key geometric parameters influence the device performance. By combining wideband tunability, angular and polarization invariance, and design simplicity, this metasurface holds substantial promise as a versatile component for next-generation THz technologies.</p></div>\",\"PeriodicalId\":720,\"journal\":{\"name\":\"Optical and Quantum Electronics\",\"volume\":\"57 5\",\"pages\":\"\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2025-04-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.1007/s11082-025-08186-0.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical and Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11082-025-08186-0\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-025-08186-0","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Tunable wide band near-perfect absorber for terahertz waves based on a vanadium dioxide metasurface
Vanadium dioxide (VO2) is a remarkable phase-change material whose temperature-driven insulator-to-metal transition unlocks powerful tunability in the THz regime. Here, we present a VO2-based metasurface that not only achieves over 90% absorption efficiency across a broad 1.27–2.64 THz range when in its metallic phase, but also transitions into a nearly perfect reflector (0.1–4 THz) in its dielectric phase. This striking dual functionality leverages the unique conductivity variation of VO2 with temperature and is realized through a metasurface on a thin SiO2 spacer backed by a gold layer. Notably, our design maintains insensitivity to both polarizations and incidence angle—crucial characteristics for practical THz applications—while offering a robust, wideband response. Through systematic analysis, we elucidate the physical mechanisms governing the high absorption and reflection, and demonstrate how key geometric parameters influence the device performance. By combining wideband tunability, angular and polarization invariance, and design simplicity, this metasurface holds substantial promise as a versatile component for next-generation THz technologies.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.