2D electronic Materials: Integration strategies for electronics and optoelectronics

The unique structural, electrical, and optical properties of two-dimensional (2D) electronic materials including graphene, transition metal dichalcogenides (TMDs), and hexagonal boron nitride (h-BN), are making them revolutionary building blocks for advanced electronics and optoelectronics. The integration strategies of these materials will be discussed in the present review to facilitate next-generation electronic and optoelectronic devices. It includes basics of 2D materials, growth techniques, and integrated methods such as monolithic as well as photonic circuit-based integration. We discuss recent developments regarding 2D material integration, highlight challenges to scaling their functionality, and outline routes toward addressing these limits. An important focus of this review is to describe how the mechanical exfoliation, chemical vapor deposition, and transfer techniques used in developing high-quality 2D films affect the performance of a device as well as describe how hybrid heterostructures can be used towards enhanced device performance. An analytical overview of the field shows that 2D materials allow for high-performance photodetector sensitivity, light-emitting diodes, and transistors operating at radio frequencies but defects and uniformity hinder the integration of this technology on a large scale. Based on a thorough review, this paper demonstrates the exceptional potential of two-dimensional (2D) electronic materials for emerging applications in energy-efficient optoelectronics, flexible electronics, and biosensing. These insights are expected to guide research across disciplines and enable scalable, reliable devices that will fulfill essential applications in communications, health care, and energy.