{"title":"镍网上的花状镍锰层状双氢氧化物与碳纳米管阵列作为不对称超级电容器的无粘结剂电极","authors":"Xue Wang, Shuanghui Zeng, Dongjing Liu, Jiao-Jing Shao, Zhao Ding, Jie Zhao","doi":"10.1007/s10854-025-14767-2","DOIUrl":null,"url":null,"abstract":"<div><p>Flower-like nickel manganese layered double hydroxide coupled with carbon nanotube arrays in-situ grown on a nickel mesh (NiMn-LDH/CNTs@Ni) has been prepared by a facile hydrothermal method. By increasing the Mn/Ni ratio, the thickness of the LDH nanosheets increased while the spherical structure built up from the interconnected LDH nanosheets degraded. The optimized NiMn-LDH/CNTs@Ni exhibits a three-dimensional flower-like structure with the CNT arrays in-situ grown on nickel mesh by chemical vapor deposition method acting as stems to connect the NiMn-LDH nanoflowers. The prepared NiMn-LDH/CNTs@Ni exhibit high specific capacitance of 1367 F g<sup>−1</sup> at 1 A g<sup>−1</sup>, capacitance retention of 76% at 10 A g<sup>−1</sup> and excellent cycling performance in 3 M KOH aqueous solution. First-principles calculations show that Mn doping improves the electron transport and charge transfer capabilities by narrowing the energy gap and increasing the density of states near the Fermi level, which is conducive to enhancing the charge storage capacity. Asymmetric supercapacitors fabricated with NiMn-LDH/CNTs@Ni and nitrogen-doped carbon nanotubes exhibited energy densities as high as 31.8 W h kg<sup>−1</sup> at a power density of 800 W kg<sup>−1</sup>, demonstrating the potential of the fabricated binder-free electrodes for practical applications. This study demonstrates that modulating the electronic structure and nanostructure by doping hetero metal atoms can effectively improve the charge storage capacity of LDHs.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 11","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Flower-like NiMn layered double hydroxide coupled with carbon nanotube arrays on nickel mesh as binder-free electrode for asymmetric supercapacitor\",\"authors\":\"Xue Wang, Shuanghui Zeng, Dongjing Liu, Jiao-Jing Shao, Zhao Ding, Jie Zhao\",\"doi\":\"10.1007/s10854-025-14767-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Flower-like nickel manganese layered double hydroxide coupled with carbon nanotube arrays in-situ grown on a nickel mesh (NiMn-LDH/CNTs@Ni) has been prepared by a facile hydrothermal method. By increasing the Mn/Ni ratio, the thickness of the LDH nanosheets increased while the spherical structure built up from the interconnected LDH nanosheets degraded. The optimized NiMn-LDH/CNTs@Ni exhibits a three-dimensional flower-like structure with the CNT arrays in-situ grown on nickel mesh by chemical vapor deposition method acting as stems to connect the NiMn-LDH nanoflowers. The prepared NiMn-LDH/CNTs@Ni exhibit high specific capacitance of 1367 F g<sup>−1</sup> at 1 A g<sup>−1</sup>, capacitance retention of 76% at 10 A g<sup>−1</sup> and excellent cycling performance in 3 M KOH aqueous solution. First-principles calculations show that Mn doping improves the electron transport and charge transfer capabilities by narrowing the energy gap and increasing the density of states near the Fermi level, which is conducive to enhancing the charge storage capacity. Asymmetric supercapacitors fabricated with NiMn-LDH/CNTs@Ni and nitrogen-doped carbon nanotubes exhibited energy densities as high as 31.8 W h kg<sup>−1</sup> at a power density of 800 W kg<sup>−1</sup>, demonstrating the potential of the fabricated binder-free electrodes for practical applications. This study demonstrates that modulating the electronic structure and nanostructure by doping hetero metal atoms can effectively improve the charge storage capacity of LDHs.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 11\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-14767-2\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14767-2","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
采用水热法在镍网(NiMn-LDH/CNTs@Ni)上原位生长制备了花状镍锰层状双氢氧化物耦合碳纳米管阵列。随着Mn/Ni比的增加,LDH纳米片的厚度增加,而由相互连接的LDH纳米片形成的球形结构降解。优化后的NiMn-LDH/CNTs@Ni呈现出三维花状结构,通过化学气相沉积法在镍网上原位生长的碳纳米管阵列作为连接NiMn-LDH纳米花的茎。所制备的NiMn-LDH/CNTs@Ni在1 A g−1时具有1367 F g−1的高比电容,在10 A g−1时电容保持率为76%,在3 M KOH水溶液中具有优异的循环性能。第一性原理计算表明,Mn掺杂通过缩小能隙和增加费米能级附近的态密度,提高了电子输运和电荷转移能力,有利于增强电荷存储能力。用NiMn-LDH/CNTs@Ni和氮掺杂碳纳米管制备的非对称超级电容器在功率密度为800 W kg - 1时,能量密度高达31.8 W h kg - 1,证明了制备的无粘结剂电极在实际应用中的潜力。本研究表明,通过掺杂异质金属原子调制LDHs的电子结构和纳米结构,可以有效地提高LDHs的电荷存储能力。
Flower-like NiMn layered double hydroxide coupled with carbon nanotube arrays on nickel mesh as binder-free electrode for asymmetric supercapacitor
Flower-like nickel manganese layered double hydroxide coupled with carbon nanotube arrays in-situ grown on a nickel mesh (NiMn-LDH/CNTs@Ni) has been prepared by a facile hydrothermal method. By increasing the Mn/Ni ratio, the thickness of the LDH nanosheets increased while the spherical structure built up from the interconnected LDH nanosheets degraded. The optimized NiMn-LDH/CNTs@Ni exhibits a three-dimensional flower-like structure with the CNT arrays in-situ grown on nickel mesh by chemical vapor deposition method acting as stems to connect the NiMn-LDH nanoflowers. The prepared NiMn-LDH/CNTs@Ni exhibit high specific capacitance of 1367 F g−1 at 1 A g−1, capacitance retention of 76% at 10 A g−1 and excellent cycling performance in 3 M KOH aqueous solution. First-principles calculations show that Mn doping improves the electron transport and charge transfer capabilities by narrowing the energy gap and increasing the density of states near the Fermi level, which is conducive to enhancing the charge storage capacity. Asymmetric supercapacitors fabricated with NiMn-LDH/CNTs@Ni and nitrogen-doped carbon nanotubes exhibited energy densities as high as 31.8 W h kg−1 at a power density of 800 W kg−1, demonstrating the potential of the fabricated binder-free electrodes for practical applications. This study demonstrates that modulating the electronic structure and nanostructure by doping hetero metal atoms can effectively improve the charge storage capacity of LDHs.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.