{"title":"(111)取向SrTiO3表面沉积La: HfO2外延薄膜","authors":"Mingkai Qing, Peijie Jiao, Hongying Chen, Zhiyu Liu, Yu Deng, Di Wu","doi":"10.1007/s00339-025-08513-y","DOIUrl":null,"url":null,"abstract":"<div><p>(111)-oriented 5%La: HfO<sub>2</sub> (HLO) thin films have been successfully deposited on La<sub>0.67</sub>Sr<sub>0.33</sub>MnO<sub>3</sub> buffered (111)-oriented SrTiO<sub>3</sub> (STO) substrates by pulsed laser deposition. The growth of the orthorhombic HLO films with a rhombohedral distortion follows a domain matching epitaxy mechanism and twin domains appear as revealed by atomic resolution scanning transmission electron microscopy. These (111)-oriented HLO films show 6-fold in-plane symmetry due to the twin domains rotated 180° to each other around the surface normal. The HLO films, 15 nm in thickness, on (111)-oriented STO exhibit robust ferroelectric properties with an optimized remanent polarization around 13 µC/cm<sup>2</sup> without any wake-up process.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 5","pages":""},"PeriodicalIF":2.5000,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Epitaxial La: HfO2 films deposited on (111)-oriented SrTiO3\",\"authors\":\"Mingkai Qing, Peijie Jiao, Hongying Chen, Zhiyu Liu, Yu Deng, Di Wu\",\"doi\":\"10.1007/s00339-025-08513-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>(111)-oriented 5%La: HfO<sub>2</sub> (HLO) thin films have been successfully deposited on La<sub>0.67</sub>Sr<sub>0.33</sub>MnO<sub>3</sub> buffered (111)-oriented SrTiO<sub>3</sub> (STO) substrates by pulsed laser deposition. The growth of the orthorhombic HLO films with a rhombohedral distortion follows a domain matching epitaxy mechanism and twin domains appear as revealed by atomic resolution scanning transmission electron microscopy. These (111)-oriented HLO films show 6-fold in-plane symmetry due to the twin domains rotated 180° to each other around the surface normal. The HLO films, 15 nm in thickness, on (111)-oriented STO exhibit robust ferroelectric properties with an optimized remanent polarization around 13 µC/cm<sup>2</sup> without any wake-up process.</p></div>\",\"PeriodicalId\":473,\"journal\":{\"name\":\"Applied Physics A\",\"volume\":\"131 5\",\"pages\":\"\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2025-04-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics A\",\"FirstCategoryId\":\"4\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s00339-025-08513-y\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics A","FirstCategoryId":"4","ListUrlMain":"https://link.springer.com/article/10.1007/s00339-025-08513-y","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Epitaxial La: HfO2 films deposited on (111)-oriented SrTiO3
(111)-oriented 5%La: HfO2 (HLO) thin films have been successfully deposited on La0.67Sr0.33MnO3 buffered (111)-oriented SrTiO3 (STO) substrates by pulsed laser deposition. The growth of the orthorhombic HLO films with a rhombohedral distortion follows a domain matching epitaxy mechanism and twin domains appear as revealed by atomic resolution scanning transmission electron microscopy. These (111)-oriented HLO films show 6-fold in-plane symmetry due to the twin domains rotated 180° to each other around the surface normal. The HLO films, 15 nm in thickness, on (111)-oriented STO exhibit robust ferroelectric properties with an optimized remanent polarization around 13 µC/cm2 without any wake-up process.
期刊介绍:
Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.