溶液处理NiO/CdS/ITO双波长光电探测器光电特性研究

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-04-14 DOI:10.1016/j.sna.2025.116560

Ethar Yahya Salih , Shahad Imad Hasan , Enas Dhiyya SalahAlden , Mustafa K.A. Mohammed

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引用次数: 0

摘要

采用溶液处理框架制备了宽带自供电NiO/CdS/ITO光电探测器。系统地研究了沉积层的结构和光学特征，并对其光响应器件进行了分析。特别是，沉积的NiO和CdS层对应的光学带隙分别为3.48和2.45 eV。同时，获得的光电流显示出良好的定向波长依赖性，在375和500 nm入射波长处分别为0.59和0.25 mA，在其周围有降低的趋势。同时，所提出的几何结构在6和14 mW/cm2时，光响应度分别为44.8和64.67 mA/W的光电流与施加的照明功率之间表现出线性相关（R2 = ~ 0.99）。最后，在375和500 nm入射波长下，时间分辨特性分别表现出231/244和250/380 ms的响应/恢复时间相关特征。除了制造几何结构的坚固性和可靠性外，所提出的器件可能代表相对直接的光电设计的替代框架。

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Optoelectronic characteristics of solution processed NiO/CdS/ITO photodetector for dual-wavelength detection

Broad-band self-powered NiO/CdS/ITO photodetector was fabricated via solution processed framework. The structural and optical features of the deposited layers were systematically investigated in relation to their photo-responsive device analysis. In particular, the optical bandgap exhibited values of 3.48 and 2.45 eV corresponded to the deposited NiO and CdS layers, respectively. In conjunction, the attained photocurrent revealed a well-oriented wavelength dependency with values of 0.59 and 0.25 mA at incident wavelengths of 375 and 500 nm, respectively, around which lower trend was noticed. In the meanwhile, the proposed geometry demonstrated linear correlation (R² = ∼0.99) between the attained photocurrent along the applied illumination power with photo-responsivity values of 44.8 and 64.67 mA/W at 6 and 14 mW/cm², respectively. Finally, the time-resolved property exhibited response/recovery time-related features with values of 231/244 and 250/380 ms. at incident wavelengths of 375 and 500 nm, respectively. In addition to the robustness and reliability of the fabricated geometry, the presented device might represent an alternative framework for relatively straight-forward optoelectronic design.

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...