带边缘增强脉冲发生器和预强调非对称分数间隔FFE的28纳米CMOS 128 gb /s PAM-4发射机

IF 5.6 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Solid-state Circuits Pub Date : 2025-04-16 DOI:10.1109/jssc.2025.3557781

Hongzhi Wu, Xuxu Cheng, Weitao Wu, Liping Zhong, Catherine Wang, Yangyi Zhang, Xiongshi Luo, Dongfan Xu, Quan Pan

引用次数: 0

摘要

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 128-Gb/s PAM-4 Transmitter With Edge-Boosting Pulse Generator and Pre-Emphasis Asymmetric Fractional-Spaced FFE in 28-Nm CMOS

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来源期刊

IEEE Journal of Solid-state Circuits 工程技术-工程：电子与电气

CiteScore

11.00

自引率

20.40%

发文量

351

审稿时长

3-6 weeks

期刊介绍： The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.