Kairan Bian;Weiyuan Wang;Xiao Ma;Tianjiao Li;Hong Wang
{"title":"基于改进的帝国主义竞争算法的硅基氮化镓 HEMT 小信号模型","authors":"Kairan Bian;Weiyuan Wang;Xiao Ma;Tianjiao Li;Hong Wang","doi":"10.1109/LMWT.2025.3535773","DOIUrl":null,"url":null,"abstract":"We propose an improved imperialist competitive algorithm (I-ICA)-based extraction method for small-signal model of GaN HEMT on Si. The proposed algorithm introduces differential evolution and boundary processing in the empire assimilation process, which effectively improves the search ability and search speed. The experimental results show that the improved imperialistic competition algorithm greatly improves the traditional optimization algorithm, which falls into local optimum. In the frequency range from 0.1 to 9 GHz, the simulation results agree well with the measurements under different operating conditions, indicating the reliability of the model.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 4","pages":"464-467"},"PeriodicalIF":0.0000,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Small-Signal Model of GaN-on-Si HEMTs Based on Improved Imperialist Competitive Algorithm\",\"authors\":\"Kairan Bian;Weiyuan Wang;Xiao Ma;Tianjiao Li;Hong Wang\",\"doi\":\"10.1109/LMWT.2025.3535773\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose an improved imperialist competitive algorithm (I-ICA)-based extraction method for small-signal model of GaN HEMT on Si. The proposed algorithm introduces differential evolution and boundary processing in the empire assimilation process, which effectively improves the search ability and search speed. The experimental results show that the improved imperialistic competition algorithm greatly improves the traditional optimization algorithm, which falls into local optimum. In the frequency range from 0.1 to 9 GHz, the simulation results agree well with the measurements under different operating conditions, indicating the reliability of the model.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 4\",\"pages\":\"464-467\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2025-02-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10870425/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10870425/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Small-Signal Model of GaN-on-Si HEMTs Based on Improved Imperialist Competitive Algorithm
We propose an improved imperialist competitive algorithm (I-ICA)-based extraction method for small-signal model of GaN HEMT on Si. The proposed algorithm introduces differential evolution and boundary processing in the empire assimilation process, which effectively improves the search ability and search speed. The experimental results show that the improved imperialistic competition algorithm greatly improves the traditional optimization algorithm, which falls into local optimum. In the frequency range from 0.1 to 9 GHz, the simulation results agree well with the measurements under different operating conditions, indicating the reliability of the model.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
