低功率相控阵系统中带相位误差补偿的真差分衰减器

0 ENGINEERING, ELECTRICAL & ELECTRONIC
Nengxu Zhu;Xin Zhang;Yiting Zhang;Zhen Yang;Bing Liu;Zenglong Zhao;Fanyi Meng
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引用次数: 0

摘要

本文介绍了一种具有宽带相位补偿特性的真差分磁可切换耦合线(td - mscl)衰减器。该结构具有低插入损耗(IL)、紧凑的尺寸、低幅度和相位误差以及固有的ESD保护。与MSCL结构相比,TD-MSCL结构提供具有共模抑制的差分操作,更适合于太赫兹集成电路。此外,它还通过诱导两个差模(DM) MSCL单元之间的适当耦合,在宽带宽上进行相位补偿。该衰减器原型采用0.13- $\mu $ m SiGe BiCMOS技术实现,在200-230 GHz范围内仅显示2.6 dB IL和<0.43 dB/5°rms幅度/相位误差,在0.019 mm2的紧凑面积内显示14 dB CM抑制比(CMRR)。据我们所知,它是第一个真正的220 GHz及以上的差分衰减器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A True-Differential Attenuator With Phase Error Compensation for Low-Power Phased Array Systems
This letter presents a true-differential magnetically switchable coupled-lines (TD-MSCLs)-based attenuator with broadband phase compensation characteristics. The structure features low insertion loss (IL), compact size, low amplitude and phase errors, and intrinsic ESD protection. Compared to the MSCL structure, the TD-MSCL structure offers differential operation with common-mode (CM) rejection that is more suitable for terahertz ICs. In addition, it features phase compensation over a wide bandwidth by inducing proper coupling between two differential-mode (DM) MSCL cells. The attenuator prototype was implemented in a 0.13- $\mu $ m SiGe BiCMOS technology, exhibiting only 2.6-dB IL and <0.43 dB/5° rms amplitude/phase error within 200–230 GHz and 14-dB CM rejection ratio (CMRR) in a compact area of 0.019 mm2. To the best of our knowledge, it is the first true differential attenuator at 220 GHz and beyond.
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