在锑化物异质结构上的外延铝层探索约瑟夫森结效应

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-04-17 DOI:10.1016/j.mseb.2025.118285

W. Pan , K.R. Sapkota , P. Lu , A.J. Muhowski , W.M. Martinez , C.L.H. Sovinec , R. Reyna , J.P. Mendez , D. Mamaluy , S.D. Hawkins , J.F. Klem , L.S.L. Smith , D.A. Temple , Z. Enderson , Z. Jiang , E. Rossi

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引用次数: 0

摘要

在这篇文章中，我们介绍了我们最近在锑化物异质结构上外延生长铝（epi-Al）的研究结果，其中epi-Al薄膜在室温或低于零度的温度下生长。在T ~ 1.3 K的温度下，观察到这些epi-Al薄膜发生了急剧的超导转变。我们进一步证明了在迁移率μ ~ 1.0 × 106 cm2/Vs的epi-Al/antimonide异质结构中制造的Josephson结可以实现超电流状态。这些结果清楚地表明，我们已经取得了越来越高的高质量epi-Al/antimonide异质结构，这是探索量子信息科学和微电子应用中约瑟夫森结效应的一个有前途的平台。

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Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects

In this article, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero °C. A sharp superconducting transition at T ∼ 1.3 K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/antimonide heterostructures with mobility μ ∼ 1.0 × 10⁶ cm²/Vs. These results clearly demonstrate we have achieved growing high-quality epi-Al/antimonide heterostructures, a promising platform for the exploration of Josephson junction effects for quantum information science and microelectronics applications.

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.